IS61LPS25636B-200TQLI

Memory

The IS61LPS25636B-200TQLI is a synchronous low-power low-voltage SRAM device. It provides a combination of fast high-speed access time, low current operation, and programmability, making it ideal for a wide range of applications. For example, the IS61LPS25636B-200TQLI is well suited for use in mobile phones, mobile PDAs, and other battery-powered consumer products.

The IS61LPS25636B-200TQLI utilizes an internal 4Kx256 Organization with an 8-word burst length, to provide fast sequential read/write access. The device is designed to operate with a single +3.3V power supply, and offers operating temperatures from -40 to 85℃. Programmable features include write enable, output enable, chip select, boot mode, and read cycle termination.

At the heart of the IS61LPS25636B-200TQLI is its working principle. The device consists of two static random-access memory (SRAM) arrays, a row decoder, a column decoder and control logic. The two arrays are composed of individual memory cells which are interconnected by common source and drain lines and a common decoding logic. When a memory address is applied to the row and column decoders, the corresponding bank of sixteen cells is enabled and the data stored in these sixteen cells is read out. The data can also be written to these cells with the write enable signal, placing the data in a given memory location.

The IS61LPS25636B-200TQLI is an ideal solution for a wide range of applications, such as notebook and laptop PCs, digital still cameras, PDAs and other mobile products. The fast access time and low power consumption of the device make it well suited for today’s demanding applications. The IS61LPS25636B-200TQLI is a perfect solution for any application that requires low-power, high-speed SRAMs.