IS61LV6416-10TL-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (64K x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3.135 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II

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Memory
The IS61LV6416-10TL-TR is a high-density synchronous static RAM (SRAM) designed specifically for extremely low power applications. The IS61LV6416-10TL-TR operates from a single 3 V power supply and dissipates very low static power, making it an ideal choice for battery-powered memory systems. In addition, the device offers low duty cycle operation and CMOS data retention for improved power efficiency in low duty cycle applications. The IS61LV6416-10TL-TR is available in an 8-pin SOIC package, and is offered with either 5 ns or 10 ns access times.

The IS61LV6416-10TL-TR is a CMOS integrated circuit that is designed to replace or expand the memory capacity of a computer or other systems. The device features a pin-compatible 64K x 16 asynchronous static RAM, allowing densities up to 4 Mbits. The IS61LV6416-10TL-TR enables designers to reduce device count and board space, while supporting high-speed, low power operations. Power is supplied through a 3 V single supply, and the device has a standby current of less than 1μA.

The IS61LV6416-10TL-TR has a maximum output drive capability of 12 mA at 3 V, and is well-suited for microprocessor and memory systems requiring small footprint and low power consumption. The device features excellent burst operation, allowing single-cycle program execution, as well as a low operating temperature range of 0°C to 70°C. A dedicated CS supplement pin is also provided, which ensures quick activation/deactivation of the device, thereby eliminating the need for a chip enable signal.

Applications of the IS61LV6416-10TL-TR include portable wireless device memory, memory card controllers, handheld digital assistants, security systems, and embedded systems. The device has a high-speed static RAM (SRAM) architecture that allows for fast access time and improved power efficiency. In addition, the device can be operated in any logic mode, either synchronous or asynchronous.

The IS61LV6416-10TL-TR provides data bus interface control and extended viewing of the entire address and data bus without the use of additional clock and enable signals. The device has a wide operating temperature range of 0°C to 70°C and provides a data protection register, which ensures that data is retained in case of a power-down or reset.

The IS61LV6416-10TL-TR is designed to work in a variety of systems and applications. Its synchronous design provides fast access and control with low power capabilities. In addition, the device features excellent burst operation, making it ideal for single cycle program execution. The IS61LV6416-10TL-TR provides designers with increased memory capacity and a highly efficient memory system, making it an ideal choice for embedded and mobile computing applications.

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