IS61LV6416-10TLI-TR

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The IS61LV6416-10TLI-TR is a high-performance CMOS static RAM. It is a 64K x 16 organization that is organized into 2K rows by 32 columns, with each word being 16-bits wide. It has an asynchronous input/output access time of 10 ns, while its synchronous version IR command rate is 200 ns. The device also features a page mode that is said to be twice as fast as the normal column address strobe/row access strobe protocols with a maximum access time of 10 ns.

The IS61LV6416-10TLI-TR has several features that make it ideal for a variety of applications, including embedded systems, instrumentation, data acquisition, RF circuitboards, and more. It is also suited for applications that require high performance, low power consumption, and low cost. Some of its features include a proprietary high-speed addressing system, two high-speed word write cycles, two-page mode high-speed peeking, dual CAS latency for faster access speeds, priority testing for faster memory access, and programmable burst lengths.

In addition to its features, the IS61LV6416-10TLI-TR is a reliable memory device due to its high-reliability of flag mapped architecture. This design architecture is composed of four memory banks, each on a separate flag cycle. A flag cycle refers to the amount of time taken to write data to the SRAM. The design of IS61LV6416-10TLI-TR is such that any write operation takes less than one flag cycle. This process increases the data security and reliability of the memory device.

The IS61LV6416-10TLI-TR offers high-speed access and the latest in advanced memory management techniques. Its high-performance and low-power features make it perfect for applications requiring fast read and write access with minimal power consumption. Its reliability, flexibility, and low-cost solution ensure that it can be used in a wide variety of applications.

Working Principle of IS61LV6416-10TLI-TR:

The working principle of the IS61LV6416-10TLI-TR is based on a flag mapped architecture. The flags in the architecture link to its internal memory which is divided into four banks that correspond to a flag cycle. The flag cycle is the total amount of time taken for a write operation to occur. This design allows for single word operations as well as burst cycles by setting the burst length properly.

The IS61LV6416-10TLI-TR uses an advanced asynchronous read/write scheme to maximize the access speed. This scheme utilizes a double data rate with two read/write cycles per cycle period. This allows the device to access data as soon as the address is provided. The page mode feature of the device further increases the access speed by allowing for two page accesses in one flag cycle.

The IS61LV6416-10TLI-TR also features a priority testing mode to ensure data reliability. This mode performs testing on the data within the device by checking the status of the flags in the flag mapped architecture. The priority testing mode can also reset the device\'s flags if necessary.

In summary, the IS61LV6416-10TLI-TR is a high-performance static RAM with a flag mapped architecture. It offers high-speed access and low-power consumption with its asynchronous read/write scheme and page mode feature. Additionally, its priority testing mode allows it to detect and reset any errors that may occur during a write operation. These features make the IS61LV6416-10TLI-TR suitable for embedded systems, instrumentation, data acquisition, and RF circuitboards, allowing it to meet the demands of a wide range of applications.

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