IS61NVF51236B-6.5TQL-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous
Memory Size:	18Mb (512K x 36)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	--
Access Time:	6.5ns
Memory Interface:	Parallel
Voltage - Supply:	2.375 V ~ 2.625 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	100-LQFP
Supplier Device Package:	100-LQFP (14x20)

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Memory refers to a device used to store data and instructions on a computer. IS61NVF51236B-6.5TQL-TR is a type of memory chip widely used in computers and other electronic systems. This high performance chip is widely used in various application fields. Application FieldsIS61NVF51236B-6.5TQL-TR is a 16-Mbit configuration device used in various application fields. It is widely used in desktop computers, notebook computers, servers and embedded systems. This type of memory chip is particularly suitable for the embedded systems that require dynamic random access memory (DRAM). It is also used in other applications such as wireless LANs, LCD displays, embedded internet technologies, and other communication systems. Working PrincipleIn order to understand the operation of the IS61NVF51236B-6.5TQL-TR, it is important to know how it works. This type of memory chip stores data in an array of memory cells. The cells are connected together in a series of address and data lines which can be programmed to store and retrieve data. When data is read from the memory chip, the address lines are addressed, allowing the data stored in the respective cell to be read. This type of memory is volatile, meaning that whenever the power is switched off, the data stored in the memory cells is lost.SpecificationsThe IS61NVF51236B-6.5TQL-TR is a 16-Mbit Configuration technology device. It features a fast random access memory (DRAM) with a read/write cycle time of 0.8 ns (nanoseconds). In addition, this device has a burst access capability with a total of 8 transfers per read cycle and 16 transfers per write cycle. The power consumption of the device is 4.5-5.5V and it is available with a silicon substrate and an extended temperature range. In addition to its performance, the IS61NVF51236B-6.5TQL-TR has several other features that make it attractive to users. It has a 650nm low power process design which reduces power consumption while still maintaining high performance. The chip also has on-board diagnostic test routines and an integrated circuit with built-in error correcting codes (ECC). Finally, the device has an automatic power down feature that reduces power consumption when there is no activity. AdvantagesThe IS61NVF51236B-6.5TQL-TR has a variety of advantages over other types of memory chips. Its fast random access memory (DRAM) and burst access capability make it suitable for high performance applications such as embedded systems and wireless LANs. The chip also has a low power process design which reduces power consumption and eliminates the need for additional power management circuitry. Finally, the chip has an integrated circuit with built-in ECC and an automatic power down feature which help to increase reliability and reduce power consumption. ConclusionIS61NVF51236B-6.5TQL-TR is a high performance memory chip that is suitable for various application fields. It has a fast random access memory (DRAM) and a burst access capability, as well as a low power process design and an integrated circuit with built-in ECC. The power down feature also helps to reduce power consumption and increases reliability. This memory chip is a great option for applications that require high performance and reliability.

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