IS61QDB21M36A-250M3L Allicdata Electronics
Allicdata Part #:

IS61QDB21M36A-250M3L-ND

Manufacturer Part#:

IS61QDB21M36A-250M3L

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 36M PARALLEL 165LFBGA
More Detail: SRAM - Synchronous, QUAD Memory IC 36Mb (1M x 36) ...
DataSheet: IS61QDB21M36A-250M3L datasheetIS61QDB21M36A-250M3L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUAD
Memory Size: 36Mb (1M x 36)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Access Time: 8.4ns
Memory Interface: Parallel
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)
Description

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IS61QDB21M36A-250M3L Application Field and Working Principle

Memory

The IS61QDB21M36A-250M3L is a high-speed, high-density Quasi-static CMOS (QCMOS) 256K x 8-bit Static Random Access Memory (SRAM). It is housed in a 28-pin, 300-mil DIP package and is designed for high performance, high speed microprocessor and microcontroller systems.

The memory has an 8-bit read and write capability with up to 256K x 8 words of data storage. The device is organized into eight blocks of eight K x 8 words. All of the blocks have an independent address decoder that can be set up using a single address line nibble.

When the device is used in the read mode, data is available with 4-null state outputs. When the device is used in the write mode, data is transferred through the serial input port into the selected group of 8K words.

The device utilizes a battery-backed memory transfer architecture and supports QCMOS technology for reduced active power consumption. To achieve the highest level of power saving, the device can be put into a sleep state for maximum protection when on-screen display is not required.

The device has an advanced write protect feature that allows the write operations to be disabled so extra power can be conserved by disabling some write cycles. This feature can be used to help minimize the power consumption of the device.

The device also provides a buffered memory access cycle to ensure consistent access times in all operating conditions. The device includes a power-down mode that conserves power requirement in standby mode.

The IS61QDB21M36A-250M3L is ideal for applications such as storage of semi-permanent data, alarm and timestamp functions, display driver memories and digital signal processing systems. It is also well-suited for high speed addressable memories for use in microprocessor and microcontroller systems.

In summary, the IS61QDB21M36A-250M3L is a high-speed, high-density QCMOS SRAM which is ideal for high speed addressable memories for use in microprocessor and microcontroller systems. The device is designed for low power consumption and the write protect feature allows for extra power savings. The device also provides a buffered memory access cycle to ensure consistent access times in all operating conditions.

The specific data is subject to PDF, and the above content is for reference

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