IS61QDB22M18C-250M3L Allicdata Electronics
Allicdata Part #:

IS61QDB22M18C-250M3L-ND

Manufacturer Part#:

IS61QDB22M18C-250M3L

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 36M PARALLEL 165LFBGA
More Detail: SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) ...
DataSheet: IS61QDB22M18C-250M3L datasheetIS61QDB22M18C-250M3L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUAD
Memory Size: 36Mb (2M x 18)
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: --
Access Time: 8.4ns
Memory Interface: Parallel
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-LFBGA (15x17)
Description

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Memory is an important component of computer technology. The IS61QDB22M18C-250M3L is a high-performance memory chip developed by Samsung Electronics. It is a DRAM chip, meaning it is a Dynamic Random Access Memory chip. The chip is used in many applications and is an important part of modern computing equipment.

The IS61QDB22M18C-250M3L is commonly used in portable computing devices and embedded systems. It is also ideal for personal computers as well as professional computers. Its small size and low power consumption make it an ideal choice for environmental considerations.

The IS61QDB22M18C-250M3L is a dual in-line memory module (DIMM). This means that the chip is designed to fit in the standard DIMM form factor. It is capable of a maximum clock speed of 250 megatransfers per second (MT/s). The chip can manage a maximum of 16 GB of memory and a peak transfer rate of 6.4 GBytes/s.

The IS61QDB22M18C-250M3L is equipped with an advanced technology called Advanced Feedback Capacitor for improved system stability and performance. This technology helps to reduce power consumption, which in turn reduces heat buildup and increases the lifetime of the chip. Another feature of the chip is the accelerated read-write cycle times, which provides improved system performance.

The IS61QDB22M18C-250M3L is also equipped with error correcting mechanisms to address any issues that arise during operation. The most important of these mechanisms are the advanced error correction code (ECC) and the redundant row address strobes (RRAS). The ECC helps to detect errors before they can cause corruption of data. The RRAS helps to detect any defective memory locations in the chip and replace them with good data. This ensures that the data stored in the chip is always correct.

The IS61QDB22M18C-250M3L has applications in a variety of areas. It is usually used in desktop computers and servers, but can be used in embedded systems such as mobile phones and automotive navigation systems as well. It can also be used in gaming systems for enhanced graphics performance and VR (virtual reality) systems for immersive gaming experiences.

In conclusion, the IS61QDB22M18C-250M3L is a high-performance memory chip developed by Samsung Electronics. It is a DRAM chip and is used in many applications such as portable computing devices, embedded systems, and gaming systems. Its small size, low power consumption, and advanced technologies such as feedback capacitors and error correction make it an ideal choice for many applications. It is highly reliable and is capable of a maximum clock speed of 250 megatransfers per second, with a peak transfer rate of 6.4 GBytes/s.

The specific data is subject to PDF, and the above content is for reference

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