IS61QDB41M36-250M3L

IS61QDB41M36-250M3L is a type of static random access memory (SRAM), which is a type of memory used to store data and information. The device is a 4 megabit (Mb), 36 pin dual bank SRAM that operates at a supply voltage of 1.8V. It is designed to be used in high bandwidth applications, where space is at a premium, such as set top boxes and digital TVs.

IS61QDB41M36-250M3L has a wide range of features, including low power consumption, high speed read and write cycles, wide temperature range, wide voltage range, and many others. It is also designed for low cost and low pin count, providing a cost-effective solution for applications with limited hardware budget.

Application Field

IS61QDB41M36-250M3L is used in a variety of applications, including digital television, digital cellular telephones, digital cameras, set top boxes, automotive systems, portable handheld devices, test and measurement instruments. It is also used in many embedded systems, such as industrial control systems, medical imaging systems, and avionics systems.

Working Principle

The working principle of a static random access memory (SRAM) is fairly simple: it is a type of memory that stores data and information as long as power is supplied. This allows the data stored to remain intact even after the system is powered off. SRAM works by using a set of memory cells that are connected to a set of memory address wires. Each memory cell is connected to a bit line (BL) and a corresponding read/write line (R/WL) and a word line (WL). The state of a memory cell is determined by the state of the R/WL and the WL. When a read or write operation is performed, the memory address is provided on the address wires, which in turn activate corresponding WLs for the target memory cells. Then, control signals are generated to either read or write the state of the target memory cells. In writing to a memory cell, the state of the cell is changed based on the signal applied on the bit line. In reading from the memory cell, the signal on the bit line is checked to determine the state it is currently in.

IS61QDB41M36-250M3L is a very versatile SRAM designed for high speed read and write operations, as it has features such as wide temperature range, wide voltage range, low power consumption and low pin count. It is designed for applications where space is limited, making it an ideal choice for many products and systems.