IS61VPS51236B-200B3LI Allicdata Electronics
Allicdata Part #:

IS61VPS51236B-200B3LI-ND

Manufacturer Part#:

IS61VPS51236B-200B3LI

Price: $ 10.56
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 18M PARALLEL 165TFBGA
More Detail: SRAM - Synchronous Memory IC 18Mb (512K x 36) Para...
DataSheet: IS61VPS51236B-200B3LI datasheetIS61VPS51236B-200B3LI Datasheet/PDF
Quantity: 1000
144 +: $ 9.59483
Stock 1000Can Ship Immediately
$ 10.56
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: --
Access Time: 3ns
Memory Interface: Parallel
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)
Description

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The IS61VPS51236B-200B3LI is a type of dynamic random access memory (DRAM) designed by Integrated Silicon Solutions (ISIS). It is a high-performance, low-power, single-channel DRAM designed to meet the needs of many embedded and consumer applications. The IS61VPS51236B-200B3LI is optimized for performance, minimizing noise and providing a wide bandwidth. This device offers an on-chip self-refresh and low power operation, making it ideal for consumer electronics, networking, and mobile applications where power and performance are of primary concern.

The IS61VPS51236B-200B3LI has an x4 configuration and is available in densities of 64Mb, 128Mb, and 256Mb. It is a single-channel DRAM that operates at a frequency of 200MHz, with an access time of 10.5ns and a CAS latency of 3. The IS61VPS51236B-200B3LI offers an on-chip refresh mechanism which is optimized to reduce the total power consumption while providing reliable operation. It also offers an on-chip self-refresh feature, which reduces the need for additional dynamic refresh circuits, further reducing power consumption.

The IS61VPS51236B-200B3LI is designed to provide excellent performance, with an on-chip controller and row decode logic to enable fast memory access times. It also offers an internal cycle counter that enables tracking of device cycles and enables steady-state operation. The cycle counter also helps improve system performance by reducing wait cycles and providing additional performance optimization.

The IS61VPS51236B-200B3LI is a highly configurable device that can be programmed to operate in several modes. These modes include page burst access (up to 8-burst page length), page auto-refresh, page pre-charge select and page pre-charge self auto-refresh. The device also supports write latency control and write command pipelining, allowing for faster and more efficient data access. Additionally, the IS61VPS51236B-200B3LI supports error correction code (ECC) for improved data integrity.

The IS61VPS51236B-200B3LI is an advanced single-channel DRAM designed to meet the performance and power requirements of embedded and consumer applications. It offers an on-chip self-refresh feature, and several additional features to improve system performance, while consuming a minimal amount of power. The IS61VPS51236B-200B3LI is ideal for applications such as consumer electronics, medical imaging, storage, and networking where power and performance are of primary concern.

The specific data is subject to PDF, and the above content is for reference

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