IS61WV102416EDBLL-10T2LI

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IS61WV102416EDBLL-10T2LI are Dynamic Random Access Memory (DRAM) integrated circuits. They are used for storing data for desktop computers and come in different densities that offer varying amounts of information storage capacities. This type of memory device is one of the most commonly used for desktop computing and is an essential part of any modern-day computer.

The IS61WV102416EDBLL-10T2LI device is organized as a 16K x 16 bit (using 2K words) DRAM—containing 16K bit or 2K-word memory Cell Array, with refresh logic and necessary logic, such as row address buffer, column address buffer, address counter, mode register and data I/O buffer.

The device will operate in multiple operating modes depending on the logic setup:

• Asynchronous Mode: The Address Counters (RAST and CAS) will be able to contain address information to be transferred to memory cells.
• Page Mode: This type of operatation is used for writing data more rapidly. The IS61WV102416EDBLL-10T2LI DRAM can refresh memory cells in a given order, which eliminates the need for continually refreshing them.
• Low Power Mode: This mode is used to conserve energy used by the DRAM memory device by reducing the amount of power it consumes.

The IS61WV102416EDBLL-10T2LI DRAM is mainly used for applications requiring low power including Low Profile Desktop PCs, Mini PCs and embedded applications. In these types of applications the memory device offers low power consumption, fast page mode access time and extended temperature range. The device is also designed to operate well under low voltage conditions.

In addition to low power consumption and fast page mode access, the IS61WV102416EDBLL-10T2LI DRAM offers many reliability features, such as spread-spectrum clocking, auto-refresh, Detect-On-The-Fly (DOTF), and EDO (Extended Data Output) for improved memory bandwidth.

The IS61WV102416EDBLL-10T2LI DRAM works on a basic principle. Cells are arranged in an array of columns and rows. When data needs to be read or written, a signal is sent to the appropriate column and row with an address. This address is decoded by an internal chip into the column and row position of the cell, which then accesses the memory. Data leaves or is written to the memory array, depending on the type of operation.

Overall, the IS61WV102416EDBLL-10T2LI DRAM is an effective and reliable memory device that offers many advantages in low power applications. It consumes less power than other memory devices, can access data faster, and is built to handle extended temperature ranges. With these features, the IS61WV102416EDBLL-10T2LI makes an ideal choice for desktop computers and embedded applications that require low power and high performance.

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