IS61WV102416EDBLL-10TLI

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	2.4 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)

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IS61WV102416EDBLL-10TLI Memory: Application Field and Working Principle

IS61WV102416EDBLL-10TLI is a low-power 512-kbit static random access memory (SRAM). It is typically used in applications that require intensive data storage, such as digital signal processing, medical diagnostics, embedded system control, communications, gaming, consumer electronics, and other consumer-level applications. This article will discuss the application field and working principle of this SRAM.

Application Field

The IS61WV102416EDBLL-10TLI has a variety of application fields. For instance, its rapid read-and-write speed and low power consumption capability make it ideal for embedded system control in consumer electronics and appliances. For example, it can be used in digital signal processing for audio processing, image processing, video processing, and data communications. Also, its low voltage requirements make it suitable for battery-powered medical systems where a low voltage is necessary in order to extend the battery life.In addition, its small size makes it suitable for applications like digital gaming consoles and portable electronics. Its high speed and low-power capabilities are also beneficial in applications where multiple SRAMs must run simultaneously, such as in telecommunications and networking. Finally, its wide temperature range makes it suitable for industrial control systems.

Working Principle

The IS61WV102416EDBLL-10TLI is a static random access memory (SRAM). Like other SRAMs, it is able to store data without the need for refreshing. This makes it an incredibly fast type of memory.At the core of the IS61WV102416EDBLL-10TLI is an array of memory cells made from two transistors and two capacitors. Each cell stores the binary data ‘0’ or ‘1’. When the memory cell is read, the capacitor’s charge is read by the transistors, which then determines the data of 0 or 1. The write process reverses this, as the transistors are instructed to write a particular value to the memory cell by charging or discharging the capacitors.The IS61WV102416EDBLL-10TLI also benefits from having a deep cell structure, which means it can be programmed and read in a single cycle. This deep cell structure also reduces power consumption and enables faster data access times.Finally, the IS61WV102416EDBLL-10TLI is equipped with Error Correction Code (ECC) feature. This feature offers improved error correction capabilities, which is important for applications that require high levels of data integrity, such as medical diagnostics.

Conclusion

The IS61WV102416EDBLL-10TLI is a 512-kbit static random access memory (SRAM) that is ideal for a wide range of applications. Its low power consumption, fast access times, and deep cell structure make it suitable for embedded system control, digital signal processing, medical diagnostics, gaming, and other consumer-level applications. Additionally, it comes with an ECC feature that provides improved error correction capabilities.

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