IS61WV12816BLL-12TLI-TR

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Integrated Silicon Solution Inc.’s IS61WV12816BLL-12TLI-TR is an asynchronous CMOS integrated 128K x 16 Static RAM. This RAM is ideal for applications needing high speed and low-power operation and replacement of DRAMs. With its 1M-bit capacity and low-power and low-voltage operation, the IS61WV12816BLL-12TLI-TR is perfect for embedded memory applications where access latency and low-power are essential requirements.

The IS61WV12816BLL-12TLI-TR uses a single +3.3V power supply for operation. It has an access speed of 12 ns and an access time of 15ns and operates on a <25°to 85°C range. The IS61WV12816BLL-12TLI-TR includes a pseudo-static function which allows the device to behave like a static RAM while providing the higher densities of a dynamic RAM. The nonvolatile program memory contains memory cells which are organized into 128K bits of x 16bit.Thesr memory cells are altered via a programming voltage.

The IS61WV12816BLL-12TLI-TR has an asynchronous chip enable (CE) and an asynchronous output enable (OE) for control signals. The CE and OE control signals can be used to selectively enable and disable the output signals when low power operation is desired. The device includes a self-timed write cycle, during which time data is stored in the memory cells and all necessary internal operations are completed. Data is latched on the rising edge of the WRITE signal and remains in the RAM until it is changed by another write cycle.

The IS61WV12816BLL-12TLI-TR has a max data retention of 10 years at normal operating condition. The device also supports asynchronous burst access, 3 cycles of bus turnaround routines, and random cycle/sequential cycle operations. It is also available with extended temperature range of -55°C to 125°C. The device comes with a 2.5V tolerant input buffer, allowing operation of the device with reduced power consumption and greater speed.

The IS61WV12816BLL-12TLI-TR is specialized in a wide variety of application field such as data acquisition systems, digital signal processing, embedded microcontrollers, storage IP, automated test equipment and PLC/HMI systems. Working principle wise, the IS61WV12816BLL-12TLI-TR can operate in a number of different modes, which include burst access, progressive burst access and random access.When the device is in burst access mode, data is read from the RAM in a single operation without the need for individual read operations for each word. In this mode, the device can access 4 words of data in 4 clock cycles when using the CAS (Column Access Strobe) signal. The data is accessed sequentially and is written to the address specified by the first CAS command. The progressive burst access mode enables the user to manually create a burst of data in which consecutive words are written to sequential addresses.Random access is used when reading or writing words that are located at nonsequential addresses. When the device is in random access mode, read and write operations are timed to the rising edge of the write signal. Data is written to the RAM after a write operation is started and data is read from the RAM after a read operation is started.

In conclusion, the IS61WV12816BLL-12TLI-TR asynchronous CMOS integrated 128K x 16 Static RAM is a unique memory device specialized in wide variety of application fields with 1M-bits capacity and low-power and low-voltage operations. It supports asynchronous burst access, 3 cycles of bus turnaround routines, and random cycle/sequential cycle operations. Furthermore, it is available with extended temperature ranges of -55°C to 125°C and a 10 year max data retention at normal operating conditions.

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