IS61WV12816BLL-12TLI Allicdata Electronics
Allicdata Part #:

IS61WV12816BLL-12TLI-ND

Manufacturer Part#:

IS61WV12816BLL-12TLI

Price: $ 2.28
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para...
DataSheet: IS61WV12816BLL-12TLI datasheetIS61WV12816BLL-12TLI Datasheet/PDF
Quantity: 1000
270 +: $ 2.06647
Stock 1000Can Ship Immediately
$ 2.28
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS61WV12816BLL-12TLI is a type of memory that is used in high-level computing and graphical devices. The memory is used to store large amounts of data in an organized manner, allowing for quick retrieval and access. This type of memory has many applications and is used in today’s technology-driven society.

IS61WV12816BLL-12TLI is a high-speed, low power memory made using dynamic random-access memory (DRAM). The DRAM technology allows for faster reading and writing of data, reducing the amount of time needed to access the stored data. This type of memory is often used in graphics cards and video game consoles, as the ability to quickly access large amounts of data is essential in these applications.

The working principle behind IS61WV12816BLL-12TLI is relatively simple. This type of memory consists of a memory cell and an address decoder. The address decoder uses an address line to point to the memory cell in the memory bank. In the memory cell, the data is stored in a logic matrix. The logic matrix is composed of transistors connected in either a 1 or 0 state.

The transistors in the logic matrix can be switched on and off, as required. This allows the data in the memory cell to change. In order to write data to the memory cell, a write enable signal is sent to the address decoder. The decoder then turns on the necessary transistors in the logic matrix, allowing the data to be stored.

When the data stored in a particular memory cell is read, the address line is used again. The address line is used to point to the memory cell that contains the data. The read enable signal is then sent to the decoder which then switches on the transistor to create a current flow. This current flow used to transfer the data from the cell to the output. The data is then ready for use.

IS61WV12816BLL-12TLI is a versatile memory solution with many applications. This type of memory is used in a variety of computing, graphics, and gaming devices due to its high-speed, low-power requirements. With its ability to quickly store and recall large amounts of data, IS61WV12816BLL-12TLI is an essential component of modern technology. As technology advances, this type of memory is likely to become even more versatile and popular in the future.

The specific data is subject to PDF, and the above content is for reference

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