IS61WV12816EDBLL-10TLI Allicdata Electronics
Allicdata Part #:

706-1498-ND

Manufacturer Part#:

IS61WV12816EDBLL-10TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 2M PARALLEL 44TSOP2
More Detail: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para...
DataSheet: IS61WV12816EDBLL-10TLI datasheetIS61WV12816EDBLL-10TLI Datasheet/PDF
Quantity: 390
Stock 390Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Description

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IS61WV12816EDBLL-10TLI is a very popular memory chip because of its wide scope of applications and its simple working principle. It is a general-purpose Static Random Access Memory (SRAM) chip with 128 K bits, organized as 16,384 words by 8 bits. The chip supports both the asynchronous and synchronous operations, allowing for a wide range of applications.

This memory chip is used mainly in a variety of embedded systems, including medical, automotive, and consumer devices. It can be used in microcontrollers, or in digital signal processors for data storage and access. The chip also supports interfacing to different buses, such as the Advanced eXtensible Interface (AXI).

The working principle of IS61WV12816EDBLL-10TLI is quite simple. The electric charge values from 0V to VDD (generally 3V) are stored as logic ‘0s’ and ‘1s’ in an array of cells. The read and write operations are carried out through appropriate commands applied to the address pins. The chip features an active low write enable pin (WE#) and an active low chip enable pin (CE#), through which one can write and read data respectively. The chip also features a data mask (DM#) pin which is used to mask various write operations.

IS61WV12816EDBLL-10TLI also supports the READ and WRITE burst modes, in which the chip can read and write multiple bytes of data at a single address enabling fast data transfers. The READ and WRITE burst modes facilitate data transfer between fast system and slower peripherals. Additionally, the chip provides access to fast RAM access, up to 2 million cycles per second, that enables review of real-time system status and debugging.

The chip also provides low-power operation and supports multiple power–saving options such as automatic sleep mode and independent sector power control. This includes the ability to reduce power consumption of individual sectors, by turning off the power supply to unneeded chunks of memory. Lastly, IS61WV12816EDBLL-10TLI also features an on-chip error-detection circuit, providing enhanced data security and integrity, as well as on-chip ECC protection that allows for more reliable communication.

In conclusion, the IS61WV12816EDBLL-10TLI memory chip is a versatile, low-power chip with multiple features and functions, which makes it very suitable for various embedded applications. It offers fast data transfer and reliable performance, as well as enhanced data integrity and security, and it is relatively easy to integrate into many systems.

The specific data is subject to PDF, and the above content is for reference

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