IS61WV204816BLL-10TLI

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IS61WV204816BLL-10TLI Application Field and Working Principle

IS61WV204816BLL-10TLI is a highly efficient, low power static random access memory (SRAM) device produced by Integrated Silicon Solution, Inc. It is an ideal embedded memory solution for any devices that require multiple SRAMs in different power-up modes. This device utilizes 10T-LI technology, which is low power and easy to use, making it a great memory solution for a wide range of consumer products and embedded systems.

IS61WV204816BLL-10TLI is a asynchronous 256K monolithic memory that operates in both static RAM (SRAM) and ROM modes. This device is composed of a family of 32K x 16 SRAMs in four-bit mode and four 64K x 8 SRAMs in eight-bit mode. This device can serve two typical applications, namely:

• Storage of large memory addressable code, Text and image data
• Cache memory for system speed boost

The SRAM in IS61WV204816BLL-10TLI is organized into 512 rows and 512 columns for 32K x 16 x 8-bit access. The operating voltage of the device is 2.7-3.6V, which allows easy migration between applications. The device comes with a number of system-level features such as power-down mode and sleep mode, which allows lower power consumption. The device has a 5ns access time, making it ideal for high-speed data access. The device also offers the single port synchronous addressing and write back feature.

Working Principle

IS61WV204816BLL-10TLI is organized into 512 rows and 512 columns where each row can access one 16-bit word. The device is asynchronous, meaning that it can be written or read without being synchronized to the clock signal. Data transfer is done using the Read/Write signal, along with the data, address and control signals. Data is written to the device by sending a write signal and the addressing information, along with the data and control signals. The address is than used to identify a row and a column to read or write the data. The data can then be read from the selected column and the data is outputted. The device is able to access the data within 5ns after the write is initiated.

The device can also operate in standby mode, allowing it to enter a low power state when not in use. In this mode, the device will not take part in the functional read or write cycles, but will enter idle state. In this state, the device utilizes a fraction of the power it consumes in active mode, thus making the device power efficient.

IS61WV204816BLL-10TLI is designed to perform read/write operations in two main modes: static RAM (SRAM) mode and ROM mode. In the SRAM mode, data can be randomly written and read without the need to switch modes, while in the ROM mode, the device is only able to access the data written to it during the power-up mode. This device also supports data refresh cycles, which need to be performed periodically in order to ensure data reliability.

Conclusion

IS61WV204816BLL-10TLI is a highly efficient memory solution that provides high speed data access and can be easily integrated into various applications. Its low power consumption and ease of use make it an ideal choice for a large range of consumer products, embedded systems and storage solutions. The single port synchronous addressing and write back feature, along with the power-down and sleep modes, allow for easy migration between different power modes.

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