IS61WV25616EDBLL-10TLI Allicdata Electronics
Allicdata Part #:

706-1146-ND

Manufacturer Part#:

IS61WV25616EDBLL-10TLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS61WV25616EDBLL-10TLI datasheetIS61WV25616EDBLL-10TLI Datasheet/PDF
Quantity: 1772
Stock 1772Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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The IS61WV25616EDBLL-10TLI is a specialized memory integrated circuit (IC) which is mostly used in modern electronic systems where fast and reliable storage is a necessity. It is a synchronous high-speed static random-access memory device with a capacity of 256K words and a word size of 16 bits, offering a wide range of features to meet the diverse needs of today’s system designers. It is an ideal solution for applications such as industrial control and automation, medical instrumentation, automotive multimedia systems, navigation systems, and consumer electronics.

The IS61WV25616EDBLL-10TLI is designed to support fast random-access memory access times of 10 ns and 12 ns (worst case), and a sustained read/write throughput of up to 16.67M words per second. It also offers a low-power standby mode, which helps to conserve battery life, and a self-refresh function which enables the device to remain operational even when electrical power is lost. Additionally, this memory device features an extended operating temperature range of -40°C to +85°C, making it an ideal choice for challenging and demanding environments.

One of the primary benefits of the IS61WV25616EDBLL-10TLI is its advanced architecture. The device utilizes internal page addressing for rapid page reads and writes, as well as a paritied-word write to multiple locations within the same page. The output is buffered using an octal-country latch, allowing for simultaneous access and easy interfacing with complex peripherals or other logic devices. An active low chip enable also helps to ensure that the device is only activated when needed.

The IS61WV25616EDBLL-10TLI also offers optional features such as error correction code (ECC) and advanced security and encryption capabilities. ECC helps to protect against data errors, while advanced security and encryption support ensure data integrity and safeguard system resources. In addition, an integrated power-fail detection and protection feature allows the device to detect occurrences of insufficient power and automatically protect the contents of its memory.

In summary, the IS61WV25616EDBLL-10TLI is a reliable and versatile memory integrated circuit device that is suitable for applications in a wide range of fields. Its advanced features, such as fast memory access times, low-power standby mode, and optional security and encryption capabilities, make it an ideal choice for applications where speed, dependability, and protection are essential. Additionally, its extended operating temperature range makes it well suited for operation in harsh and challenging environments.

The specific data is subject to PDF, and the above content is for reference

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