IS61WV6416DBLL-10TLI Allicdata Electronics
Allicdata Part #:

706-1134-ND

Manufacturer Part#:

IS61WV6416DBLL-10TLI

Price: $ 1.32
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 1M PARALLEL 44TSOP2
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IS61WV6416DBLL-10TLI datasheetIS61WV6416DBLL-10TLI Datasheet/PDF
Quantity: 934
1 +: $ 1.20330
10 +: $ 1.09494
25 +: $ 1.06546
50 +: $ 1.05991
135 +: $ 0.94742
270 +: $ 0.94463
540 +: $ 0.93057
1080 +: $ 0.89065
5130 +: $ 0.82936
Stock 934Can Ship Immediately
$ 1.32
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Description

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Memory

The IS61WV6416DBLL-10TLI is a high-performance Static Random Access Memory (SRAM) that is used in a wide variety of applications. It is commonly used in embedded system applications such as in digital cameras, mobile phones and navigation devices.

The IS61WV6416DBLL-10TLI has a low power consumption compared to other SRAM chip types available and this makes it a preferred choice for energy-conscious applications. This SRAM chip is offered in multiple package options allowing for a more flexible design for the system designer. It also features a 10-bit asynchronous interface which provides fast access to the memory.

The IS61WV6416DBLL-10TLI works by storing data in cells arranged in a grid. Each cell can store a single bit of data and is made up of a transistor and two capacitors. When current is applied to the transistor, the capacitors become charged, which results in a binary 1. If the current is removed, the capacitors will discharge, resulting in a binary 0.

Data is retrieved from the grid of cells by providing the address, which is used to locate the specific cell. The data is then read from the cell and processed by the system. In order to write data, the address is also provided and then the data is written to the cell.

The IS61WV6416DBLL-10TLI SRAM chip is suitable for high-speed and high-reliability applications and is a popular choice for consumer applications that require low power consumption and fast access times.

The specific data is subject to PDF, and the above content is for reference

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