IS61WV6416EEBLL-10TLI-TR

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The IS61WV6416EEBLL-10TLI-TR is a Memory device that is widely used in many applications. It is a 64K x 16 high-speed static random access memory (SRAM) that provides fast and reliable data storage. It is designed to offer a competitive edge over traditional memory devices in memory applications such as data caching and buffering, data storage, and low-power computing.

The IS61WV6416EEBLL-10TLI-TR has a superior data-retention time of 20ns and an access time of 10ns which makes it a great choice for applications that require high speed and reliability. It is also equipped with low power consumption features, making it an ideal solution for applications with power-savvy requirements. It also features an increased capacity of up to 32Mbits and an improved data transmission rate of up to 400mps.

The IS61WV6416EEBLL-10TLI-TR is extensively used in consumer and industrial applications. It can be utilized in aerospace systems, communications systems, automotive systems, medical applications and so on. In consumer applications, this device is used in applications such as gaming consoles and media players, to provide fast data access and improved system performance. In industrial applications, these devices are utilized to cache data in large databases, improve system performance in security systems, and enable low power computing solutions.

The IS61WV6416EEBLL-10TLI-TR uses a synchronous SRAM design to achieve its high performance. It operates through a clocked asynchronous read/write interface, with output enable and chip enable inputs. When enabled, the read/write operation will start on the clock\'s positive transition and data is transferred on the rising edge of the input clock. The data is latched with the falling edge of the clock. Its output will remain stable until the read/write operation is complete and the chip is disabled.

The IS61WV6416EEBLL-10TLI-TR offers a wide array of features that make it an ideal choice for reliable and high-performance memory applications. It has an improved data bandwidth of up to 400mps, a low standby current of 15µA and an improved data retention time of 20ns. Furthermore, it is compliant with RoHS, JEDEC and ECCN 5A991 standards, making it suitable for use in commercial and industrial applications. Its wide range of features and superb performance make it the perfect choice for applications in memory and low-power computing.

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