IS62WV102416ALL-35TLI

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	35ns
Access Time:	35ns
Memory Interface:	Parallel
Voltage - Supply:	1.65 V ~ 2.2 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP

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Memory is an important type of computer components in modern computers. The IS62WV102416ALL-35TLI is a type of memory that can be used in a variety of different applications. This article will discuss the application field and working principle of this type of memory.The IS62WV102416ALL-35TLI is a type of static random-access memory (SRAM) that is based on 8-transistor (8T) cell technology. It is primarily used in embedded applications, such as automotive electronics and industrial automation. This type of memory is used in these applications due to its high speed and low power.In terms of the working principle of the IS62WV102416ALL-35TLI, it is based on the concept of a memory cell, which consists of a capacity element and a selection element. The capacity element stores the data to be written or read, while the selection element is used to select the row or column in which the data will be stored. The selection element is also used to determine when data will be written or read from the memory cell.The IS62WV102416ALL-35TLI memory chip is also capable of storing multiple words of information in its onboard memory cells. In order to load data into these cells, the user must provide an address signal and the data signal. The address signal is then used to select the specific cell where the data will be written, while the data signal is used to write the data into the cell. When the cell is selected, the data is retrieved from the cell and the corresponding address is returned.In summary, the IS62WV102416ALL-35TLI is a type of static random-access memory (SRAM) that is based on 8-transistor (8T) cell technology. It is primarily used in embedded applications, such as automotive electronics and industrial automation, due to its high speed and low power. The working principle of this type of memory is based on the concept of a memory cell, which consists of a capacity element and a selection element. It is also capable of storing multiple words of information in its onboard memory cells, which can be loaded and retrieved using an address signal and the data signal.

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