IS62WV51216EALL-55BLI-TR

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IS62WV51216EALL-55BLI-TR is a 16 Mbit (2M×8/1M×16) asynchronous CMOS Static RAM specifically designed for low-power and low-voltage applications. This single-port SRAM combines advanced CMOS process technology with low power and high speed, and provides the perfect solution for embedded system applications.

IS62WV51216EALL-55BLI-TR is qualified for the automotive and industrial temperature ranges, making it suitable for applications in harsh environments and requiring reliable operation over a wide temperature range. This SRAM is available in the widely used TSOP8 package. Its higher speed and extended temperature range makes it an ideal drop-in replacement for competitive products and provides a smooth transition to higher performance systems.

Application Field

IS62WV51216EALL-55BLI-TR is suitable for automotive applications such as ADAS, in-vehicle infotainment, body control and communication hubs, as well as industrial applications such as factory automation, motor control, medical imaging and motion control. Additionally, it is suitable for the ever-developing Internet of Things (IoT) and wearable device applications.

IS62WV51216EALL-55BLI-TR also offers a wide operating temperature range from -40°C to +105 °C and a super-low power consumption of only 1.2 mW in standby mode and 35 mW active mode at 1 MHz. This SRAM meets the environmental standards RoHS, Halogen Free and Pb Free, making it a great choice for automotive and industrial applications that demand stringent environmental compliance.

Working Principle

IS62WV51216EALL-55BLI-TR consists of a bidirectional data bus, a set of address inputs, and read, write, chip select and output enable control inputs. The two Chip Select (CS1&CS2) signals allow the SRAM to be interfaced with either micro-processors or memory controllers. The OE (output enable) signal is used to control the outputs of the device. The data bus is enabled by either CS1 or CS2 and OE going low. If, at the same time, the write signal is enabled all data on the data bus is written in the SRAM. When the read signal is enabled, all data in the location defined by the address inputs is presented on the data bus.

IS62WV51216EALL-55BLI-TR provides support for burst reads. Burst-read cycles are initiated by loading the burst address into the address input and selecting the chip by either CS1 or CS2 input. The address auto-incrementing feature of this SRAM allows multiple locations to be accessed in a single cycle. This feature increases power efficiency and reduces overall system cost.

The output enable (OE) input must be asserted for any data transfer from the SRAM. When OE is deasserted, the outputs are set to CMOS Hi-Z states, allowing multiple memory systems to be connected in multi-drop systems. This device also supports programmed and hardware-controlled Power-Down mode, that is controlled when the sense input goes low.

In short, IS62WV51216EALL-55BLI-TR 16 Mbit asynchronous CMOS Static RAM is perfectly suited for automotive and industrial applications in terms of its wide operating temperature range, low power consumption, extended reliability and accessibility to high speed memory applications.

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