IS62WV5128BLL-55TLI Allicdata Electronics
Allicdata Part #:

IS62WV5128BLL-55TLI-ND

Manufacturer Part#:

IS62WV5128BLL-55TLI

Price: $ 2.10
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 32TSOP I
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: IS62WV5128BLL-55TLI datasheetIS62WV5128BLL-55TLI Datasheet/PDF
Quantity: 1000
1 +: $ 2.10000
10 +: $ 2.03700
100 +: $ 1.99500
1000 +: $ 1.95300
10000 +: $ 1.89000
Stock 1000Can Ship Immediately
$ 2.1
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I
Description

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The IS62WV5128BLL-55TLI is a memory device which is widely applied in data processing. Its uses range from consumer electronic products such as digital cameras, mobile phones, PCs, and servers to industrial control, medical care, military and other equipment. This device works by storing data in specific memory locations in the form of bits. The IS62WV5128BLL-55TLI is a static random-access memory (SRAM) device with a fast access time and high density. It has a wide operating voltage range and an easy to use interface, making it suitable for a variety of applications.

The IS62WV5128BLL-55TLI works by using transistors to store data in memory cells. The memory is composed of a number of memory cells, each one capable of storing a single bit of data. The memory cell contains transistors and capacitors which, in combination, store the logic states of 0\'s and 1\'s. The transistors control the charging and discharging of the capacitors to maintain the logic state of the memory cell.

The IS62WV5128BLL-55TLI has a static architecture, meaning that it does not require refresh cycles to retain the stored data. This device is made up of a high-density array of SRAM cells with an advanced write/read access cycle. It also features page mode read operations for higher performance and faster access times. It is usually used in products that require quick access to data, such as sound cards, video cards, and digital signal processors.

The IS62WV5128BLL-55TLI also offers power saving modes, a read/write static current of 7.5mA, a standby current of 150nA, and an array read static current of 7.5mA. The device is also RoHS-compliant and is available in an 8-lead SOIC package. The device has an operating temperature range of -40 to +85 degrees Celsius and an operating voltage of 2.7-3.6 volts. It also features programmable data rates of 0, 15, 60 and 120 nanoseconds.

The IS62WV5128BLL-55TLI is a reliable, fast and low-power memory device suitable for a wide range of applications. It is especially suitable for the data processing segment where fast access and low power consumption is essential. It is suitable for use in applications such as digital signal processing, mobile phones, embedded applications, and industrial control, as well as other data processing applications where quick access to data is required. It is also suitable for use in mission critical devices and military applications.

The specific data is subject to PDF, and the above content is for reference

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