IS62WV1288BLL-55TLI-TR

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Memory devices provide the most basic function in computing systems: data is stored, processed and output in a form that can be understood by the user. The IS62WV1288BLL-55TLI-TR is an example of an integrated circuit that can be used to facilitate the read/write process of memory. It is a 128K x 8-bit fast static RAM that has a number of features that make it suitable for a variety of memory applications.

The IS62WV1288BLL-55TLI-TR is designed to offer high speed and low power operation. It operates with a maximum clock frequency of 55MHz, with a cycle time of 18ns and access time of 10ns. It has an operating voltage range of 2.3V to 3.6V with a standby current of 10µA. This makes the device ideal for space-constrained applications where fast read/write speeds are required, while also minimizing power consumption.

The IS62WV1288BLL-55TLI-TR offers a range of built-in features. These include an EEPROM-based write protection, power-down protection, block erase capabilities, a write redundancy feature, and data retention for 10 years. It is packaged in a small 9×9 mm TQFP package with a 180-ball BGA option. The device is available in 4, 8 and 16 MB configurations and is compatible with most industry-standard memory architectures.

The working principle of the IS62WV1288BLL-55TLI-TR can be explained using its key features. Upon power-up, the device will enter into a read/write cycle. This cycle is partially controlled by an external clock signal that is sent to the device’s CLK pin. Upon receipt of the clock signal, the device will begin to access the memory array and perform the necessary read/write operations. The data that is requested is then read from the memory and the result is then written back in a process known as writing-through. The device keeps track of which memory locations are accessed and will automatically erase any obsolete data that is no longer needed.

The IS62WV1288BLL-55TLI-TR is a versatile and reliable integrated circuit for a variety of memory applications. Its combination of high performance and low power operation make it suitable for use in space-constrained, high-speed memory applications. It is also highly customizable, with built-in features such as write protection, power-down protection, and data retention capabilities. This makes it an ideal solution for applications requiring secure data storage and efficient read/write processes.

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