IS62WV25616BLL-55TI Allicdata Electronics
Allicdata Part #:

IS62WV25616BLL-55TI-ND

Manufacturer Part#:

IS62WV25616BLL-55TI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS62WV25616BLL-55TI datasheetIS62WV25616BLL-55TI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS62WV25616BLL-55TI is a powerful 8MB memory chip from ISSI that offers high-speed performance and features. It is a perfect choice for a wide range of applications including industrial, automotive, and consumer electronics. The device has a low voltage operation and is compatible with the SDRAM standard. It is an ideal solution for computers, servers, and other high-performance applications.

This 8MB memory chip is a synchronous dynamic RAM (SDRAM) device and is built on a 55nm process. It has an ElecFuse™ Flash Memory that provides permanent storage. The chip has a low power operation and a low voltage operation. It has a burst length support of four with a CAS latency of 3.

The Memory chip operates on a voltage range of 2.5V - 3.6V and it is suitable for applications such as industrial and consumer electronics. It is also compatible with any system design with an asynchronous read burst length or synchronous read burst length of four. The chip has a temperature range of 0°C - 70°C and is available in a space-saving 40-pin TSOP-II package.

IS62WV25616BLL-55TI 8MB memory chip supports a maximum clock frequency of 200MHz. It has a refresh rate of 1.0ns and a total power consumption of 105mW. The device supports a row address register (RAR) write initiation which initiates the write operation in response to a write command. It also supports a row address register (RAR) programmable burst sequence which allows the user to select the order of the read or write operations. In addition, the device supports an Extended Data Out (EDO) function which increases the data throughput of the device by extending the read burst data.

IS62WV25616BLL-55TI 8MB memory chip also provides more powerful features such as an on-chip charge pump and an internal voltage regulator. The on-chip voltage regulator is able to reduce the power consumption and extend the memory’s endurance by supplying the appropriate voltage level. The device also includes a flexible auto-refresh feature which can be used to ensure data integrity in a wide range of applications.

IS62WV25616BLL-55TI 8MB memory chip consists of 256 Kbit blocks which are organized in 16 banks. Each bank has 4 Kbit blocks and is connected to four I/O pins. The four I/O pins control the control lines (WWE#, CKE#, URE#, RESET#) for the bank. The device supports an asynchronous read burst length of four. The device also supports a synchronous read burst length of four, in which the chip sends out a dummy cycle before sending the data.

IS62WV25616BLL-55TI 8MB memory chip can be used for a wide range of applications including PCs, laptops, PDAs, and mobile phones. It is a perfect choice for any system that needs a reliable, high-speed memory solution. With its low power consumption and extended endurance, the device is an ideal choice for applications that require longer battery life and reliability.

The specific data is subject to PDF, and the above content is for reference

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