IS62WV51216GBLL-45TLI

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	8Mb (512K x 16)
Write Cycle Time - Word, Page:	45ns
Access Time:	45ns
Memory Interface:	Parallel
Voltage - Supply:	2.2 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)

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Introduction of IS62WV51216GBLL-45TLI

IS62WV51216GBLL-45TLI is a high-speed, low-power asynchronous memory device mainly used for the storage of information. This 512K x 16 static RAM device, manufactured by ISSI, has been designed for both cost and power efficiency. It has an operating voltage of 1.7V~3.6V and an operating temperature range of -40C~85C. It is also RoHS compliant and WQFN-16 (4mm x 4mm) package.

Applications of IS62WV51216GBLL-45TLI

IS62WV51216GBLL-45TLI is commonly used in applications such as industrial and medical systems, handheld and portable devices, automotive electronic systems, digital consumer applications, and military/aerospace systems.IS62WV51216GBLL-45TLI is often used for applications requiring high performance and low power consumption. It is an effective choice for systems that need to store digital information for quicker access. The device can also offer improved performance in a variety of data acquisition and control systems, as well as image and video processing systems.

Working Principle of IS62WV51216GBLL-45TLI

IS62WV51216GBLL-45TLI is a static RAM device. This means that data retention is not necessary as long as the power is supplied.At the register level, the device contains two independent 512K x 8 static RAM arrays, each with a memory array addressing port and two input/output data ports. The two memory arrays can be operated independently or simultaneously. The memory arrays are accessed by either a 3-bit address port or a 9-bit address port. For quick, burst access, the device\'s unique active protection helps reduce power dissipation.At the bit level, the device includes a write-protection logic to prevent inadvertent writing. The internal write operation latency is controlled by a single CE# input. The OE# input controls the output disable time for both the read and write operations.The device can be used with both the JEDEC standard JESD18-35B and the I-RAM command set. By utilizing the JESD53-44A data transfer rate test, the performance of the device can be determined.

Conclusion

IS62WV51216GBLL-45TLI is an effective choice for a wide range of applications due to its low power consumption and high performance. Its versatile design makes it ideal for data acquisition and control systems, as well as image and video processing systems. The device offers quick, burst access and features a variety of other features such as write protection, active protection, and latency control.

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