IS66WVC2M16EALL-7010BLI

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Memory is an essential component in a wide range of electronic devices and IS66WVC2M16EALL-7010BLI is a type of memory that offers advantages for a variety of applications. This memory is a high-performance, low-power monolithic 8-Gbit Double Data Rate (DDR) SDRAM that is built on a 65nm CMOS process. It has been designed to deliver improved performance, higher densities and better power efficiency. This memory is ideal for applications such as consumer, communication and industrial applications, as well as embedded systems.

The IS66WVC2M16EALL-7010BLI is particularly well-suited for consumer applications, as it is capable of operating at up to 1.8V and delivers a low operating power of just 2.5W. The chip has been designed to deliver improved memory performance, offering a maximum frequency of 800MHz and 21GB/s of bandwidth, while supporting up to eight ranks of x16 or x18 DRAM. It also supports both Chip Select and CAS Latency, allowing for up to four Chip Selects and up to 11 CAS Latencies. The chip also supports an on-die temperature sensor that allows for improved power management.

The IS66WVC2M16EALL-7010BLI is also well-suited for use in communication applications, as it has been designed to support up to 16 ranks of DDR2 or DDR3 SDRAM, with a maximum frequency of 800MHz and 22GB/s of bandwidth. It also supports a high-performance, low-power Advanced DDR3 PHY, featuring flexible on-die termination, pre-emphasized signalling and Dynamic VREF. The chip is also able to support Chip Select, CAS Latency and DQS Postamble, allowing for up to four Chip Selects and up to 11 CAS Latencies. It also supports up to 64-bit LVDS interfaces for DQS training.

The IS66WVC2M16EALL-7010BLI is also well-suited for use in industrial applications, as it has been designed to support up to 24 ranks of DDR2 or DDR3 SDRAM, with a maximum frequency of 800MHz and 22GB/s of bandwidth. It also supports high-performance, low-power Advanced DDR3 PHY, featuring flexible on-die termination, pre-emphasized signalling and Dynamic VREF. The chip is also able to support Chip Select, CAS Latency and DQS Postamble, allowing for up to eight Chip Selects and up to 11 CAS Latencies. It also supports up to 64-bit LVDS interfaces for DQS training.

The IS66WVC2M16EALL-7010BLI is also well-suited for use in embedded systems, as it has been designed to support up to 32 ranks of DDR2 or DDR3 SDRAM, with a maximum frequency of 800MHz and 22GB/s of bandwidth. It also supports a high-performance, low-power Advanced DDR3 PHY, featuring flexible on-die termination, pre-emphasized signalling and Dynamic VREF. The chip is also able to support Chip Select, CAS Latency and DQS Postamble, allowing for up to four Chip Selects and up to 11 CAS Latencies. It also supports up to 64-bit LVDS interfaces for DQS training.

IS66WVC2M16EALL-7010BLI is an ideal memory component for a variety of applications, offering improved performance and higher densities while delivering low power consumption. The chip supports up to eight ranks of memory, with a maximum frequency of 800MHz and 21GB/s of bandwidth. It also supports both Chip Select and CAS Latency, allowing for up to four Chip Selects and up to 11 CAS Latencies, as well as up to 64-bit LVDS interfaces for DQS training. The chip has been designed to deliver improved memory performance, better power efficiency and high-performance, low-power Advanced DDR3 PHY featuring flexible on-die termination, pre-emphasized signalling and Dynamic VREF. This makes it an ideal choice for a variety of applications, including consumer, communications, industrial and embedded systems.

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