IS66WVE4M16TBLL-70BLI-TR Allicdata Electronics
Allicdata Part #:

IS66WVE4M16TBLL-70BLI-TR-ND

Manufacturer Part#:

IS66WVE4M16TBLL-70BLI-TR

Price: $ 2.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC PSRAM 64M PARALLEL 48BGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Paral...
DataSheet: IS66WVE4M16TBLL-70BLI-TR datasheetIS66WVE4M16TBLL-70BLI-TR Datasheet/PDF
Quantity: 1000
2500 +: $ 2.41117
Stock 1000Can Ship Immediately
$ 2.65
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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The IS66WVE4M16TBLL-70BLI-TR is a type of memory chip. It is a 16-megabit, 1.8-volt, 70-nanosecond SLC NAND Flash memory component, specifically designed for compact embedded applications such as mobile phones, PDAs, toys, and digital cameras. It offers incredibly fast programming times, high-speed data transmission, and extreme reliability.

In terms of its application field, the IS66WVE4M16TBLL-70BLI-TR is primarily used for mobile phones and PDAs, which require the most efficient and effective data storage solutions. It is also suitable for toys, digital cameras, and other small embedded applications that need to store large amounts of data in a limited amount of space. Additionally, because of its high-speed programming and data transmission capabilities, it is also appropriate for high-end applications like vehicular systems, military systems, and industrial automation.

To understand the working principle of the IS66WVE4M16TBLL-70BLI-TR, it is important to first understand the fundamentals of NAND Flash technology. NAND Flash is a type of non-volatile memory (NVM) that stores data without the need for an external power supply. It operates by reading and writing data in “pages” or “blocks” of a predetermined size. Each page is composed of multiple cells that are connected together. The IS66WVE4M16TBLL-70BLI-TR works by storing a single bit of data in each cell. To read the data stored in each cell, the memory chip first determines the voltage level of the connected cell and interprets it as either a “zero” (low) or “one” (high). It then writes this data to the appropriate page or block of memory.

The IS66WVE4M16TBLL-70BLI-TR is able to achieve its quick programming times and high-speed data transmission because of its 16-megabit memory capacity and 70-nanosecond cycle time. The chip has the capability of programming data within a single cell at a time, while also allowing multiple cells to be read or written simultaneously. This helps to achieve the high-speed transfers that are necessary for today\'s fast-paced mobile and embedded applications.

The extraordinary performance of the IS66WVE4M16TBLL-70BLI-TR makes it an ideal solution for a variety of different applications. By combining its fast programming and high-speed data transmission capabilities with its high-density storage capacity, this memory component is capable of providing reliable data storage solutions for a number of different systems and devices. From military vehicles and industrial automation systems to digital cameras and mobile phones, the IS66WVE4M16TBLL-70BLI-TR is a great choice for any system that requires a maximum amount of data storage in a minimum amount of space.

The specific data is subject to PDF, and the above content is for reference

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