IS66WVH16M8ALL-166B1LI Allicdata Electronics
Allicdata Part #:

706-1548-ND

Manufacturer Part#:

IS66WVH16M8ALL-166B1LI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC PSRAM 128M PARALLEL 24TFBGA
More Detail: PSRAM (Pseudo SRAM) Memory IC 128Mb (16M x 8) Para...
DataSheet: IS66WVH16M8ALL-166B1LI datasheetIS66WVH16M8ALL-166B1LI Datasheet/PDF
Quantity: 28
Stock 28Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mb (16M x 8)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 36ns
Access Time: 36ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)
Description

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The High-Bandwidth IS66WVH16M8ALL-166B1LI memory is a type of memory component commonly used in the electronic industry. It is mainly used in the communication and automotive markets, as well as being widely used in industrial and consumer devices such as phones, tablets and GPS devices.

The IS66WVH16M8ALL-166B1LI memory component is a Double Data Rate Synchronous DRAM (DDR DRAM). It is available in a 4 Megabit (MB) configuration and provides high-bandwidth operation and low power usage. With its 166MHz clock frequency and DDR2 interface, this component has a data transfer rate of up to 16.8Gb/s. It can provide the required high bandwidth and large capacity needed for many advanced applications.

This memory component has been designed to be used in a wide range of applications such as automotive, consumer, industrial and communications applications. It is also suited for large capacity applications such as medical imaging, advanced software, machine vision and video applications.

The IS66WVH16M8ALL-166B1LI memory component is built with advanced process technologies to ensure reliable operation and low power consumption. It uses a low-power Static RAM (SRAM) cell to provide high-speed access to data, and also features a built-in auto-refresh and power-savings modes.

To provide even further savings in power consumption, this memory component is also equipped with a low-voltage trigger voltage range, allowing it to be used with a wide range of power supplies. It is also built with advanced protection features such as error detection and correction (EDAC) to ensure reliable data transfer and protection of stored data. This component also features advanced temperature and humidity sensing capabilities to provide reliable operation even in extreme conditions.

In order to maximize the speed of data transfer, this memory component also has an optimized data burst length for optimal performance. It also utilizes advanced technologies such as DIMM and DDR DIMM suspension, to further improve performance and reduce power consumption.

The IS66WVH16M8ALL-166B1LI memory component is an ideal choice for applications that require high-bandwidth, large storage capacity and reliable operation in extreme conditions. It is an excellent choice for applications in the communication and automotive markets, as well as large capacity applications such as medical imaging, advanced software, machine vision and video applications.

The specific data is subject to PDF, and the above content is for reference

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