Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Memory Type:	Volatile
Memory Format:	PSRAM
Technology:	PSRAM (Pseudo SRAM)
Memory Size:	8Mb (512K x 16)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.5 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-BGA (6x8)

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Memory

IS66WV51216DBLL-55BLI-TR is a type of memory composed of dynamic random access memory (DRAM) modules that offer very low power consumption and high performance. It is mainly used as main memory and cache memory in computers, game consoles, and other electronic products. This memory is characterized by its low latency, minimum power consumption and low cost.The memory is composed of 512Mbits of flash that are organized as 16-Mbit, 8-Mbit, 4-Mbit, 2-Mbit and 1-Mbit deep memory banks. Each of the memory banks contains 8, 16, 32, 64, or 128 bytes of data, respectively. The memory provides access time of 40ns and is capable of operating at speeds up to 200MHz. It also offers Error Correction Code (ECC) capability.IS66WV51216DBLL-55BLI-TR memory is used in a variety of applications such as embedded systems, computer systems, automotive electronics, and avionics. In embedded systems, this memory is used as main memory and cache memory. It is also used as main memory in computer systems as it offers higher performance and lower power consumption than other types of memory. In automotive electronics and avionics, IS66WV51216DBLL-55BLI-TR memory is used for storage and control of data.The working principle of the IS66WV51216DBLL-55BLI-TR memory is based on a static RAM architecture. It uses a static RAM cell to store information. The RAM cell is made up of a flip-flop circuit with two transistors and two capacitors. The transistors act as a switch and the capacitors store information. When the switch is in the off position, the capacitors store the information. When the switch is activated, the information is read out from the capacitors.The IS66WV51216DBLL-55BLI-TR memory works by providing an address to the memory controller which then selects the appropriate memory bank, or banks, to receive the data. Once the data is sent to the memory, the controller reads out the data in the required order. When the data is read, the memory controller also checks for proper data integrity by calculating error correction codes (ECC). If any errors are found during the ECC check, they are corrected automatically before being sent to the CPU.In conclusion, the IS66WV51216DBLL-55BLI-TR memory is a type of memory composed of DRAM modules that offer low power consumption and high performance. It is used in a variety of applications in embedded systems, computer systems, automotive electronics, and avionics. The memory works by providing an address to the memory controller which then selects the appropriate memory bank and also checks for errors with an ECC calculation.

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