IS66WV51216DBLL-55TLI

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IS66WV51216DBLL-55TLI Memory Application Field and Working Principle

IS66WV51216DBLL-55TLI is a kind of memory belongs to ISSI (Integrated Silicon Solution Inc.) products. It is a 16Mb pseudo dual port SRAM with a configuration of 512Kx32, organized as 8M words x 16 bits. It is available in either a gird array package (GAP) or a low profile Quad Flat Pack (LQFP). It has multiple applications, such as networking, automatic test equipment, industrial control, telecommunications, set-top boxes, gaming and automotive applications and so on.

The IS66WV51216DBLL-55TLI contains a total of 512Kx32 bits of very low power CMOS static RAM organized as 8M 7words by 16 bits. The user can select either 5V or 3.3V power supply through the on board voltage regulator. Other features include self-timed power-up and power-down circuitry, and hardware-controlled data retention capability.

The IS66WV51216DBLL-55TLI pseudo dual port SRAM utilizes two data ports, a port 1 and a port 2. The two ports are functionally identical, both ports accept byte, burst, page and chip select instructions, and both feature 4-bit by 16-bit multiplexed I/O and optional internal ECC: a separate 80-bit error correction code (ECC) memory for each port. The pseudo dual port SRAM also provide a port 0 with 7-bit by 8-bit data for communication, 2 configurable "owned" and "valid" bits (O/V bits) for each port, and a power-down bit. When the power-down bit is active, the memory is disabled and all operations are frozen.

The IS66WV51216DBLL-55TLI has two main working modes: asynchronous and synchronous. In the asynchronous mode, the port 1 and port 2 are treated as two independent memories. Accessing port 1 while simultaneously accessing port 2 is allowed, and all instructions are accomplished by individual instructions.In the synchronous mode, port 1 and port 2 are treated as one single memory. One port will wait for the data of the previous port as its data source, which results in faster operation.

The IS66WV51216DBLL-55TLI supports multiple memory operations, including serveral: write, read, burst write, burst read, page write, page read, chip read and chip select. In a write operation, the data provided by port 1 and port 2 will be written into corresponding address within the designated cycle time. In a read operation, the data of the designated address will be read from the memory into port 1 or port 2 within the designated cycle time. In a burst write/read operation, multiple data will be written/read from/to the assigned address within the designated burst time. In a page write/read, data from multiple addresses is written/read out from the memory in parallel within the designated time. In chip select, all the data in the memory will be reset, and the operations will be denied unless the chip select is activated. The chip read operation is used to read out all the data in the memory.

The IS66WV51216DBLL-55TLI also features a number of features to improve system performance. These features include read + write latency, write enable skew, data bus inversion and two sleep modes. The read + write latency allows the user to specify how many clock cycles the device requires to execute a read or write operation. The write enable skew allows the user to specify the maximum difference between the write cycles’ beginning and end times. The data bus inversion feature allows data to be read and written in reverse, improving transfer bandwidth. The two sleep modes, self-refresh and deep power down, allows the user to conserve power during system idle.

Overall, the IS66WV51216DBLL-55TLI is an ideal solution for low power, high performance applications. Its wide range of operating modes, low power consumption and advanced features make it an excellent choice for networking, telecommunication, and automotive applications.

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