IS66WV1M16EBLL-70BLI

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology is one of the most important components in modern electronic systems. IS66WV1M16EBLL-70BLI is a type of memory technology designed for high-speed and low-power applications, utilizing a process technology known as pseudo-static RAM, or PSRAM.

IS66WV1M16EBLL-70BLI is a low-power pseudo-static memory chip, manufactured by Infineon Technologies AG, that is suitable for applications that require performance and power efficiency. Compared to traditional SRAM chips, PSRAM chips offer higher density and better performance.

IS66WV1M16EBLL-70BLI is commonly used in a variety of devices, from embedded media players to smart phones and other mobile devices. It is also used in digital cameras and other devices that require data storage.

In terms of application field, IS66WV1M16EBLL-70BLI is an excellent choice for mobile and embedded applications. It offers small package size and low power consumption, making it ideal for mobile and embedded device applications. Additionally, its high-speed performance and small footprint offer advantages over traditional SRAM and DRAM memory chip solutions.

IS66WV1M16EBLL-70BLI has a unique design and principles of operation. It utilizes a pseudo-static RAM memory array, which maintains data for read and write operations in a balanced, low-power manner. It also uses a self-timed write process which helps conserve power. Furthermore, the chip features split address bits, allowing the original address to be stored in the two halves of the memory array and providing flexibility in the address organization.

IS66WV1M16EBLL-70BLI is based on a 6-transistor cell structure, featuring a single-ended write command driven by a single bit. The memory array is divided into 8 8-bit words, with each bit accessible through a single word line and a clock line. The data width of the chip is 8-bit, with a 128kbyte memory array. Its standby current is as low as 800μA/MHz, making it suitable for high-performance, low-power applications.

The features and performance of IS66WV1M16EBLL-70BLI make it an optimum choice for applications that require performance and power efficiency. Its high-speed and small footprint offer advantages over traditional SRAM and DRAM, and its low power consumption makes it ideal for a wide range of mobile and embedded applications.

The specific data is subject to PDF, and the above content is for reference