| Allicdata Part #: | ISL89165FBEBZ-ND |
| Manufacturer Part#: |
ISL89165FBEBZ |
| Price: | $ 2.68 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Intersil |
| Short Description: | MOSFET DRIVER 2CH 5.0V 6A 8SOIC |
| More Detail: | Low-Side Gate Driver IC Inverting, Non-Inverting 8... |
| DataSheet: | ISL89165FBEBZ Datasheet/PDF |
| Quantity: | 802 |
| 1 +: | $ 2.43810 |
| 10 +: | $ 2.18925 |
| 100 +: | $ 1.79361 |
| 500 +: | $ 1.52687 |
| 1000 +: | $ 1.28772 |
| Logic Voltage - VIL, VIH: | 1.85V, 3.15V |
| Base Part Number: | ISL89165 |
| Supplier Device Package: | 8-SOIC-EP |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 125°C (TJ) |
| Rise / Fall Time (Typ): | 20ns, 20ns |
| Input Type: | Inverting, Non-Inverting |
| Current - Peak Output (Source, Sink): | 6A, 6A |
| Series: | -- |
| Voltage - Supply: | 4.5 V ~ 16 V |
| Gate Type: | N-Channel MOSFET |
| Number of Drivers: | 2 |
| Channel Type: | Independent |
| Driven Configuration: | Low-Side |
| Part Status: | Active |
| Packaging: | Tube |
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The ISL89165FBEBZ is a single-chip high-side power MOSFET and low-side power MOSFET driver for automotive and industrial applications. The device is capable of driving up to 8.0A RMS and can withstand voltage surges up to ±40V. The ISL89165FBEBZ has a wide operating temperature range from -40°C to +125°C and is available in a TSSOP-20 package.
The ISL89165FBEBZ belongs to the family of gate drivers, which is used in power management integrated circuits (PMICs). A gate driver is a electronic circuit or power stage that is used to establish or change a driving voltage level between two states: high (VH) and low (VL). The gate driver is a voltage source that provides precise levels of voltage to the gate of the power transistor, thus providing the precise current level. The gate driver also enables the rapid switching of the control signals between levels.
The ISL89165FBEBZ integrates two gate drivers in one compact solution to drive up to 8.0A of RMS current and handle supply voltages up to 12V. Its two independent gate drivers include a high-side and low-side driver with their own dedicated enable pins. The high-side driver provides high forward- and reverse-voltage protection, and the low-side driver can power up to a 30V high-side MOSFET. The device also includes diagnostic features to enable the detection of logic level and low-side MOSFET short-circuit and open-load conditions.
The ISL89165FBEBZ is designed for automotive, industrial, and other power conversion applications requiring both permanent and i2C control with two independent gate drivers. Its two integrated gate drivers and wide voltage range enable the device to work in applications from 6 to 12V. The gate drivers can individually be operated in a high-side or low-side driver configuration, for either P-channel or N-channel half-bridge arrangements.
The ISL89165FBEBZ brings a unique combination of features for automotive PWM applications. It has a low current quiescent current of 4µA which reduces system power consumption and allows the device to remain in standby mode for an extended period of time. The device is also equipped with advanced fault protection features like input undervoltage lockout (UVLO), overcurrent detection with flag output (OCD), thermal shutdown (TSD), and over temperature protection (OTP).
In conclusion, the ISL89165FBEBZ is a high-side and low-side gate driver integrated with advanced fault protection features, designed to drive up to 8.0A RMS of current and handle voltages up to 12V. It is suitable for automotive, industrial, and other high-voltage power conversion applications requiring both permanent and I2C control with two independent gate drivers.
The specific data is subject to PDF, and the above content is for reference
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ISL89165FBEBZ Datasheet/PDF