IXCP01N90E

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The IXCP01N90E is a state-of-the-art EconoDUAL-3 highest-speed logic-level trench MOSFET, uniquely designed and optimized for medium current applications. It provides a combination of low on-resistance, fast conduction, and low threshold voltage in a small TO-220 or SOT-223 footprint.

The IXCP01N90E is a high-performance, single-channel MOSFET suitable for a wide range of applications including resonant converters, low-impedance power supply rail switches, and high-current DC-DC converters. It is optimized for operation in the DC-DC converter topologies that use a fixed voltage at the input side and a fixed frequency on the output side. The MOSFET also features an option for an integrated N-Channel silicon-controlled rectifier (SCR), for added protection against overvoltage and/or overcurrent conditions.

The IXCP01N90E offers low on-resistance for low conduction losses and low gate charge for improved electrical drive performance. The MOSFET also features a low input capacitance, which makes it suitable for use in high-switching frequency applications. It also offers a high gain-bandwidth product, allowing operation at higher frequencies than other devices.

The IXCP01N90E also provides a threshold voltage of 0.7 V, which allows for simple switching with low power control signals. It has an input capacitance of less than 7 pF, and a reverse recovery time of less than 3 ns. Additionally, it offers excellent thermal stability with its maximum operating temperature of 150°C.

In terms of its working principle, when a voltage is applied to the gate of the IXCP01N90E, an electric field is created between the source and the drain regions of the device, resulting in a current channel or low on-state resistance. As the gate voltage increases, the electric field increases, and the channel widens, thus increasing the current conduction capability of the device. When the gate voltage is reduced to zero, the current channel collapses, and the MOSFET turns off.

For applications requiring fast switching speeds, the IXCP01N90E offers low on-resistance, fast conduction, and low gate charge. It is also suitable for use in high-frequency switching converter designs, as it offers a low input capacitance and fast reverse recovery time. Additionally, it offers excellent thermal stability and can be used in applications requiring up to 150°C operation.

In conclusion, the IXCP01N90E is a superior logic-level MOSFET, optimized for medium-current applications such as resonant converters and high-current DC-DC converters. It offers low on-resistance and fast conduction, as well as a low threshold voltage, low input capacitance, and fast reverse recovery time for high switching speeds. Additionally, it provides excellent thermal stability for operation at up to 150°C.

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