IXDE509PI

Logic Voltage - VIL, VIH:	0.8V, 2.4V
Base Part Number:	IXD*509
Supplier Device Package:	8-PDIP
Package / Case:	8-DIP (0.300", 7.62mm)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	25ns, 23ns
Input Type:	Inverting
Current - Peak Output (Source, Sink):	9A, 9A
Series:	--
Voltage - Supply:	4.5 V ~ 30 V
Gate Type:	IGBT, N-Channel, P-Channel MOSFET
Number of Drivers:	1
Channel Type:	Single
Driven Configuration:	Low-Side
Part Status:	Obsolete
Packaging:	Tube

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IXDE509PI is an integrated gate driver and protection diodes circuit designed to provide high voltage isolation and high level of suppression of parasitic diodes that can be generated due to the high voltage isolation. This device provides protection to the system and active components while it is designed to maximize the protection in harsh electrical environments with the help of a single efficient dual bridge isolator with active diodes. This device is designed to reduce power losses while providing a very high level of surge protection.The IXDE509PI is a 3-stage amplifier designed to provide high voltage drive capabilities and to provide active synchronization. Its features include low saturation voltage, short switching times and fast rise and fall times for optimal noise reduction. In addition, it offers adjustable turn-on and turn-off delays to minimize the switching noise of the system.This IC can be used to drive high voltage power MOSFETs and IGBTs when used in an inverter, a smelter or for other high voltage applications. It provides a very low saturation voltage and low On resistance, thus reducing the power losses in the device. The high voltage isolation provides very low transit times, which results in better noise reduction and improved performance.Additionally, the IXDE509PI is protected against destructive shorts and over-temperature conditions. It provides protection to the active components while in operation and prevents unwanted shorts that may occur due to system failures. The protection circuits prevent damage or destruction of the active components in case of an over-heating situation.The IXDE509PI features a high voltage meander structure and a low-power transistor design to reduce the power losses. In addition, it features an efficient power control unit that allows to drive the MOSFET with higher efficiency thereby lowering the switching losses. This device is designed to provide an optimal voltage control and isolation capabilities, while keeping the operating temperature of the drivers at low levels.To summarize, the IXDE509PI is an integrated gate driver and protection diodes device designed to provide high voltage isolation, high level of suppression of parasitic diodes, and low saturation voltage and low On-resistance for optimal power management and the desired performance. It has been developed to be applied to high voltage applications in the industrial and automotive fields. The device features a high voltage meander structure and a low-power transistor design, plus an optimized power control unit to maximize efficiency. This IC will provide the reliable and robust operation required in harsh applications.

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