IXDE509SIAT/R Allicdata Electronics
Allicdata Part #:

IXDE509SIAT/R-ND

Manufacturer Part#:

IXDE509SIAT/R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC GATE DRIVER 9A 8-SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC
DataSheet: IXDE509SIAT/R datasheetIXDE509SIAT/R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Base Part Number: IXD*509
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 25ns, 23ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 9A, 9A
Series: --
Voltage - Supply: 4.5 V ~ 30 V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 1
Channel Type: Single
Driven Configuration: Low-Side
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Integrated Electronics Systems (IES) has launched IXDE509SIAT/R, a high speed/high power gate driver for power devices. This product is designed for all kinds of system circuit protection devices, including MOSFET, IGBT and thyristor, as well as their associated gate guard circuits. It can be used to drive various high-power applications, such as motor drive, welding machines and power supply systems. The IXDE509SIAT/R can be used to prevent system circuit overloading and voltage surge. By using this gate driver, the gate control of power devices can be optimized, thereby achieving fast controlling.

The feature of IXDE509SIAT/R gate drivers include high operating temperature (150°C), low gate-to-source voltage drop (Vg=3V), and high output current (Io=5A). Apart from that, it has a wide operating frequency range (2kHz up to 25MHz). The IXDE509SIAT/R gate drivers come with the I2C-like serial input signal, and the built-in dedicated microcontroller can be used to control the driver. In addition, these components also have a built-in bi-directional isolation loop for high isolation system. This isolation prevents direct contact among the digital ICs and the power devices.

The IXDE509SIAT/R gate drivers have different working principle. Firstly, the high side switch is powered by the VCC and the low side switch is connected to the ground. Secondly, the gate driver creates a voltage source by generating a current that is higher than the voltage drop across the switch. The purpose of this is to provide more power to drive the power device. Thirdly, the gate driver turns on the high side switch to make sure the power is connected to the load, and the low side switch is turned off. Finally, the power device changes the voltage across the load to control the actual power flow. By correctly controlling the voltage and current across the switch, the IXDE509SIAT/R gate driver can offer accurate power control.

The IXDE509SIAT/R gate driver can be used in numerous application fields. In automobile industry, it can be used to provide an efficient driving for MOSFET, IGBT and thyristor based ignition systems. In power industry, the IXDE509SIAT/R can be used to drive the weld guns, welding machines, and power supply systems. In railway transportation, it can be used to drive motor enabled speed control system. In the medical field, its advanced voltage control capabilities can help doctors to accurately control the power flow of certain equipment.

In conclusion, the IXDE509SIAT/R gate driver is an excellent product from IES which has advanced voltage control capabilities. It can be used to ensure fast controlling and efficient powering for various kinds of system protection devices. This product can be used for many applications in the automobile, power, railway and medical industries.

The specific data is subject to PDF, and the above content is for reference

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