IXDE514SIAT/R

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXDE514SIAT/R is a high-performance gate driver integrated circuit (IC) designed by IXYS Corporation to drive power topologies such as Bridge-type, Flyback, Push-Pull, and Forward switching converters. This IC is well suited for both single ended (SE) and full-bridge (FB) applications. Featuring both peak-current control and snapshot features, the IXDE514SIAT/R is an ideal solution for bringing power designers improved reliability and increased design flexibility.

The IXDE514SIAT/R is an integrated circuit that enables easy bridgeless designs using an external MOSFET, providing a high-performance solution for driving power topologies. By integrating a differential transmitter/receiver pair, the IC can provide power online with a minimal external component count. With its onboard voltage monitoring, the IXDE514SIAT/R is able to monitor input voltage levels and confirm the power is stable before starting the bridge operation.

This IC also includes a wide range of protection features such as over current, under voltage and over temperature protection that can be tailored to the application. The IXDE514SIAT/R is designed to deliver high-speed switching performance with low propagation delays and guaranteed short circuit withstand time, resulting in improved reliability and efficiency.

The main application for IXDE514SIAT/R is for Gate-Driver applications. This IC can be used for a variety of DC-DC converters and can be inserted into the bridge as a bridge driver. The IC is capable of driving high power MOSFETs or IGBTs and can be used in buck, boost, and flyback converters. It has the ability to drive MOSFETs in both full-bridge topologies and can be configured to meet the requirements of the application. The IXDE514SIAT/R also supports synchronous rectification in order to increase efficiency in the circuit.

The IXDE514SIAT/R is designed with a variety of features to provide protection against over-current, under-voltage, and over-temperature conditions. It can be used in either open loop or closed loop configurations and can be configured to provide input voltage or temperature-based protection. Additionally, it includes an advanced oscillator to reduce EMI effects, enabling fast switching speeds and providing tight regulation.

In terms of its working principle, the IXDE514SIAT/R uses the voltage difference between a control voltage and the power supply voltage to drive the MOSFET bridge. When the control voltage is higher than the power supply voltage, the MOSFETs on the high side turn "on" and the currents flow in the direction of the load. At the same time, the MOSFETs on the low side are turned "off", enabling power to be drawn from the source and current to flow in the correct direction. The IXDE514SIAT/R also enables the implementation of current-sense feedback, providing a highly accurate and controlled power delivery.

Overall, the IXDE514SIAT/R is a high-performance gate driver integrated circuit that provides versatile design flexibility and features such as peak-current control and snapshot features, while also delivering improved reliability and efficiency. This gate driver can be used for a wide range of applications, including buck, boost, and flyback converters, and is capable of driving high power MOSFETs or IGBTs. Additionally, this IC offers a variety of protection features, making it an ideal solution for power designers looking to improve the safety and performance of their design.

The specific data is subject to PDF, and the above content is for reference