IXDF502SIA Allicdata Electronics
Allicdata Part #:

IXDF502SIA-ND

Manufacturer Part#:

IXDF502SIA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC GATE DRIVER 2A 8-SOIC
More Detail: Low-Side Gate Driver IC Inverting, Non-Inverting 8...
DataSheet: IXDF502SIA datasheetIXDF502SIA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Logic Voltage - VIL, VIH: 0.8V, 3V
Base Part Number: IXD*502
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Input Type: Inverting, Non-Inverting
Current - Peak Output (Source, Sink): 2A, 2A
Series: --
Voltage - Supply: 4.5 V ~ 30 V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Obsolete
Packaging: Tube 
Description

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<p> IXDF502SIA is a high-side DMOS power switch driver (PMIC - Gate Drivers). It includes advanced CMOS/DMOS integrated circuit technology and provides all necessary circuitry to build a high-side switch. The IXDF502SIA application field covers all switching in the power range up to 160V and 10A.</p><p>The IXDF502SIA provides the necessary controlled inversion of the input voltage, required to switch the high-side DMOS. It does not require any external components besides the high-side DMOS and can be implemented virtually anywhere in the control or power system.</p><p>The IXDF502SIA features an enhanced precision threshold function, which ensures fast, incident-wave switching and offers unbeatable immunity against EMC disturbances. The short layout of the outputs in voltage ULN designs ensures, that boundaries remain within permissible limits to ensure a high level of protection against breakdown due to EOS.</p><p>The IXDF502SIA operates in conjunction with the high-side DMOS connected between VS and the control input. When the control input is connected to ground, the high-side DMOS switch is open, allowing the output voltage to rise to VS. As soon as the control input rises above a certain level, the high-side DMOS switch is closed, allowing the output voltage to fall to ground. This level is preset at typically one fifth of the input voltage.</p><p>The IXDF502SIA advanced CMOS/DMOS technology also features an adjustable input threshold voltage. The externally adjustable threshold voltage allows the user to set the desired level to turn the DMOS switch OFF and ON. The adjustable threshold voltage also prevents the DMOS switch from getting noisy, resulting in a smooth, low noise operation.</p><p>The IXDF502SIA is designed for use with any logic level and can be used in battery powered applications. Its integrated Schmitt trigger buffer eliminates the need for additional components and its high-side switch design eliminates parasitic noise from the power rail. The IXDF502SIA also includes an adjustable gate input impedance and adjustable feedforward impedance, allowing the user to tailor the fields of application, depending on the power switch to be used.</p><p>The IXDF502SIA is also well-suited for use as a gate driver for MOSFETs, IGBTs and high-side switches. Its low input ground current of 16A ensures complete gate driving of high voltage IGBTs. It provides fast, incident-wave switching and offers unbeatable immunity against EMC disturbances. Its short layout of the outputs in voltage ULN designs ensures that boundaries remain within permissible limits to ensure a high level of protection against breakdown due to EOS.</p>

The specific data is subject to PDF, and the above content is for reference

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