IXDF504SIA

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The IXDF504SIA is a PMIC - Gate Driver designed for easy and reliable control of medium to large size low side MOSFETs or IGBTs in a wide variety of consumer and industrial applications. The device is designed to be used in standalone systems, in combination with the IX8501SIA gate driver, or in conjunction with compatible gate drivers from other vendors.

The IXDF504SIA integrates a dual-channel gate driver IC and all associated external parts, including power MOSFET, sense resistor, voltage regulator, and associated output logic, in a compact 16-pin four-sided surface-mount device. The device can be used as a standalone solution, or as part of a distributed MOSFET/IGBT driver system.

The IXDF504SIA offers protection against overcurrent, over-voltage, over-temperature and under-voltage conditions while providing extremely low power dissipation and high efficiency performance. The device operates from a single, wide input voltage range from 12V to 36V. The wide input voltage range and the low power dissipation make the IXDF504SIA ideal for battery powered applications.

The IXDF504SIA features an isolated power supply for improved robustness and is designed to allow the use of non-polarized capacitors such as film and ceramic caps. This can improve the endurance and the performance of the system during high temperature aging and various other applications. The IXDF504SIA also features an enable switch that allows the driver to be easily turned ON/OFF or to be put in standby mode.

The IXDF504SIA is designed to provide a low on-time switch to drive MOSFETs or IGBTs at switching frequencies up to 2Mhz. The device has an internal switch node voltage limiter that can be used to protect the system from high voltage transients caused by lightning, static discharge and other types of high energy transients.

The IXDF504SIA has a built-in 4-level gate drive architecture. This enables the use of small power MOSFETS and their associated output logic to drive medium to large size MOSFETs and IGBTs with high efficiency and low power dissipation. The 4-level gate drive architecture also reduces the switching losses by forcing the device’s resistance to be low during its on-time. This makes the IXDF504SIA an ideal choice for high frequency switching applications.

The IXDF504SIA provides a built-in voltage sense circuit that measures the voltage at the gate pin of the MOSFET or IGBT device. This allows the device to be used with a wide range of power devices. The voltage sense circuit also enables the use of higher voltage supplies for the power MOSFETs or IGBTs, thus reducing the on-time during switching.

Overall, the IXDF504SIA is an excellent choice for medium to large size MOSFETs and IGBTs in a variety of applications. The device offers low on-time switch, wide input voltage range, low power dissipation, high efficiency and easy enable switch feature. The IXDF504SIA is well suited for battery powered applications and for use in high frequency switching applications.

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