IXDI402SIA Allicdata Electronics
Allicdata Part #:

IXDI402SIA-ND

Manufacturer Part#:

IXDI402SIA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC MOSFET DRVR DUAL 2A 8-SOIC
More Detail: Low-Side Gate Driver IC Inverting 8-SOIC
DataSheet: IXDI402SIA datasheetIXDI402SIA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Logic Voltage - VIL, VIH: 0.8V, 3V
Base Part Number: IXD*402
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 8ns, 8ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 2A, 2A
Series: --
Voltage - Supply: 4.5 V ~ 35 V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Obsolete
Packaging: Tube 
Description

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PMIC - Gate Drivers: IXDI402SIA Application Field and Working Principle

The IXDI402SIA is a high-performance gate driver from IXYS. It is specifically designed for driving high-current IGBTs and MOSFETs. This device is integrated for high power applications, such as welding and solar power systems. It offers both 4A and 8A sink and 4A source options, along with adjustable dead times for optimal power efficiency.

In terms of the application field, this driver can be used for high-power switching and current control. Furthermore, the IXDI402SIA can be used in a wide range of applications, such as controlling high-power motor drives, power conversion systems, power supplies, and AC/DC inverters. This flexibility makes the IXDI402SIA an ideal choice for many different applications.

Working Principle

The working principle of this device relies on four main factors. First, the IXDI402SIA utilizes a 5V power supply, which enables it to provide up to 8A current to drive high-power IGBTs or MOSFETs. Second, the device is designed to have low-signal-to-noise ratio and fast switching times. Third, a low-enable control signal allows for adjustable dead times for optimal power efficiency. Finally, the IXDI402SIA includes over-voltage protection, over-temperature protection, and a diagnostic output.

The IXDI402SIA uses the input enable signal to allow for dynamic on-off control of the gate voltage. This enables the user to adjust the drive strength and the slew rate when driving high-power IGBTs and MOSFETs. In addition, the IXDI402SIA also features over-voltage protection and over-temperature protection.

The IXDI402SIA also utilizes two main push-pull transistors, along with two driver transistors. The push-pull transistors are used to create high-side, low-side, and floating-output control outputs. The driver transistors are used for driving the gate of the IGBT or MOSFET. Furthermore, the IXDI402SIA also includes a diagnostic output, which provides a direct indication of device performance.

Conclusion

In conclusion, the IXDI402SIA is an highly-integrated gate driver designed for high-power applications. It provides a 5V power supply, allows for adjustable dead times, and features over-voltage and over-temperature protection. The working principle of this device is based on the usage of two main push-pull transistors, along with two driver transistors, which are used to create high-side, low-side, and floating-output control outputs. In addition, the IXDI402SIA also includes a diagnostic output, providing an easy means to monitor the overall performance of the device.

The specific data is subject to PDF, and the above content is for reference

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