IXDI504D1T/R Allicdata Electronics
Allicdata Part #:

IXDI504D1T/R-ND

Manufacturer Part#:

IXDI504D1T/R

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IXYS
Short Description: IC GATE DRIVER DUAL 4A 6-DFN
More Detail: Low-Side Gate Driver IC Inverting 6-DFN (4x5)
DataSheet: IXDI504D1T/R datasheetIXDI504D1T/R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Logic Voltage - VIL, VIH: 0.8V, 3V
Base Part Number: IXD*504
Supplier Device Package: 6-DFN (4x5)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 9ns, 8ns
Input Type: Inverting
Current - Peak Output (Source, Sink): 4A, 4A
Series: --
Voltage - Supply: 4.5 V ~ 30 V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IXDI504D1T/R is a type of Polarity Modulation Isolated Component (PMIC) Gate Drivers, and is used to drive power MOSFETS and IGBTs in various applications. It is a compact, single-channel MOSFET/IGBT gate driver that can provide up to 4A peak output current. The IXDI504D1T/R is an ideal choice for high current and high voltage applications like servo motors, solar inverters, and motor drive systems.

The IXDI504D1T/R has a very wide application range, from small motor control drives to high power semiconductor switches applications. It can be used in a wide variety of motor control systems such as servo motors, stepper motors, and other motion control systems. It is also used in high power switching devices, such as high-voltage DC/DC converters and other power application circuits.

The working principle of the IXDI504D1T/R is based on the bi-directional voltage gate driver topology. A dual full-bridge MOSFET transistors are used as the input to the gate driver. The IXDI504D1T/R supports both an inverter type and a common ground configuration. In an inverter type configuration, both internal gates are driven by the same voltage source – one positive and one negative. In a common ground configuration, one internal gate is driven by a positive voltage source and the other by a negative voltage source.

The IXDI504D1T/R features high power and high-speed switching performance, with its high slew-rate of up to 15 A/µs. It also provides short reaction times and fast dynamic response times with its exclusive pulse current control technology. The IXDI504D1T/R is also designed with hysteresis temperature protection to avoid thermal runaway and reduce heat dissipation.

The IXDI504D1T/R is designed with integrated circuits that are packaged in a die-cast metal casing for superior durability and the highest level of protection. It also features integrated EMC immunity and is optimized for controlled switching noise. The IXDI504D1T/R is also equipped with built-in short circuit protection and over-current characteristics for maximum safety and reliability.

The IXDI504D1T/R is a versatile and reliable gate driver solution for a wide range of power electronic applications. It is ideal for high current, high voltage, and high power applications and provides superior performance, reliability, and safety. Its high power and high-speed switching performance, combined with its integrated EMC immunity and safety features, makes the IXDI504D1T/R a great choice for applications in motor control, servo motors, stepper motors, inverters, DC/DC converters, and other power electronics systems.

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