IXFF24N100 Allicdata Electronics
Allicdata Part #:

IXFF24N100-ND

Manufacturer Part#:

IXFF24N100

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 22A I4-PAC
More Detail: N-Channel 1000V 22A (Tc) Through Hole ISOPLUS i4-...
DataSheet: IXFF24N100 datasheetIXFF24N100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: i4-Pac™-5 (3 Leads)
Supplier Device Package: ISOPLUS i4-PAC™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 390 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXFF24N100 is a 4-channel N-MOSFET power transistor with an integrated integrated circuit. It is designed for high-density applications such as portable electronics, automotive and industrial applications. The IXFF24N100 can be used in a wide range of applications thanks to its low on-resistance of 2 mΩ and low gate charge of 13 nC. With these features, the IXFF24N100 can be used as a power switch for Motor Control, DC-DC Controllers, Inverters, Uninterrupted Power Supplies, and more.

The IXFF24N100 is a single technology transistor with a built-in integrated circuit that contains both an N-MOSFET and a P-MOSFET. The N-MOSFET and P-MOSFET each have their own gate, drain, and source. The gate and drain are controlled by the integrated circuit while the source is open to the external power supply. The N-MOSFET and P-MOSFET together form a power switch, allowing current to flow through the device. This allows for the control of higher voltages and currents with a lower on-resistance than conventional semiconductor devices.

The IXFF24N100 is a power MOSFET which is ideal for motor control, lighting, appliance and power supply applications. The device features an ultra-low on-resistance of 2 mΩ. This low resistance greatly reduces the power losses resulting from the high current that flows through the device, allowing for more efficient operation. This high-density power MOSFET contains an integrated circuit, which provides a high degree of protection against overvoltage, overtemperature, and electrostatic discharge.

The IXFF24N100 has a working principle based on a MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). The MOSFET works by controlling the amount of current flowing through the device by changing the voltage at the gate terminal. A positive voltage applied to the gate terminal will cause the current to increase, while a negative voltage will cause the current to decrease. This makes it easier to control the amount of current flowing through the MOSFET, and can also be used to control the speed of a motor, the brightness of a light, or the voltage output from a power supply.

The IXFF24N100 is suitable for a variety of applications where a large amount of power is needed in confined spaces. It is especially effective for motor control, power supplies, uninterrupted power supplies, inverters, and automotive and industrial applications. With its high-density design and its low on-resistance, the IXFF24N100 is an ideal choice for applications where efficiency and protection are a must.

The specific data is subject to PDF, and the above content is for reference

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