| Allicdata Part #: | IXKF40N60SCD1-ND |
| Manufacturer Part#: |
IXKF40N60SCD1 |
| Price: | $ 13.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 38A I4-PAC-5 |
| More Detail: | N-Channel 600V 41A (Tc) Through Hole ISOPLUS i4-P... |
| DataSheet: |  IXKF40N60SCD1 Datasheet/PDF |
| Quantity: | 1000 |
| 25 +: | $ 11.87520 |
| Vgs(th) (Max) @ Id: | 3.9V @ 3mA |
| Package / Case: | i4-Pac™-5 (3 Leads) |
| Supplier Device Package: | ISOPLUS i4-PAC™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | Super Junction |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 70 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 41A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXKF40N60SCD1 is a field effect transistor manufactured by IXYS Corporation, a leading power semiconductor company. This device is a single N-channel MOSFET with a drain-source voltage of 600V. The IXKF40N60SCD1 combines advanced power MOSFET and advanced packaging technologies to provide highly reliable and efficient operations for a wide range of applications.
Application Field
The IXKF40N60SCD1 is widely used in various applications that require high voltage, fast switching and low on-resistance. Some of the applications where this device is used include:
- Switching mode power supplies
- SMPS
- Audio applications
- DC/DC converters
- Uninterruptible power supply (UPS)
- Computer peripherals
- Industrial control
- Telecommunications circuits
- Lighting control
Working Principle
The IXKF40N60SCD1 operates on the principle of a MOSFET. MOSFET stands for Metal-Oxide Semiconductor FET, which is a type of FET (Field Effect Transistor) that uses a metal-oxide gate insulator. The gate controls the current flowing between the drain and source terminals. The drain and source terminals correspond to the emitter and collector of a bipolar junction transistor, respectively.
In the MOSFET structure, the gate insulator is placed between the gate region and the substrate. When a voltage is applied to the gate, it attracts mobile electrons from the substrate, which form an inversion layer (channel) between the drain and source. This creates a conductive path for electrons to flow from the source to the drain, allowing current to flow in the device.
The IXKF40N60SCD1 features low on-resistance and fast switching characteristics, thereby enabling the device to handle higher current and deliver high efficiency for the applications mentioned above. The IXKF40N60SCD1 is available in a TO-220 package for easy installation in electrical circuits.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IXKF40N60SCD1 | IXYS | 13.07 $ | 1000 | MOSFET N-CH 600V 38A I4-P... |
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