Allicdata Part #: | IXKK85N60C-ND |
Manufacturer Part#: |
IXKK85N60C |
Price: | $ 27.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 85A TO-264 |
More Detail: | N-Channel 600V 85A (Tc) Through Hole TO-264A |
DataSheet: | IXKK85N60C Datasheet/PDF |
Quantity: | 134 |
1 +: | $ 24.95430 |
10 +: | $ 23.08070 |
100 +: | $ 19.71190 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264A |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | Super Junction |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 650nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 55A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXKK85N60C is a high-performance, low-on-state resistance (RDS (on)) power MOSFET that brings forth extraordinary levels of performance. It is the latest in a series of the IXKK power MOSFETs family and is part of a larger IXRK MOSFETs range. The IXKK85N60C is specifically designed and optimized for high-current switching, such as in high-performance lighting PCBs and motor drives.
The IXKK85N60C has a drain-source voltage of 600V, allowing it to operate in a wide range of application fields such as power conversion and AC/DC distribution systems. With a low on-state resistance (0.0127 ohm) and maximum continuous drain current of 85A, the device can achieve higher power efficiency during operation. It also has a low gate charge (7.4 nC) and has a maximum gate threshold voltage of ±25V, allowing for precise operation even with large fluctuations in supply voltage. For additional flexibility, the IXKK85N60C also has temperature rise capabilities of 100°C.
The IXKK85N60C is a common-source amplifier that operates with an enhancement mode N-channel MOSFET. It works by controlling the voltage applied to the Gate terminal in order to regulate drain-source current. This is done in order to provide better power efficiency while reducing power losses. It is important to note that in order to operate properly, this device requires a high operating voltage. Furthermore, it also requires applications to use ESD protection circuits before connecting it to any other electronics.
It is also worth noting that the IXKK85N60C has a reverse current protection feature. This is designed to reduce the amount of current flowing back into the device when the voltage across the drain-source terminals is higher than the voltage applied to its gate terminal. This is an extremely important safety feature that is important to have in order to properly protect the device and its associated electronics from damage.
In conclusion, the IXKK85N60C is an advanced N-channel MOSFET designed for high-current switching operations. Its low RDS (on), high drain-source voltage, and high current capabilities make it suitable for a variety of applications such as lighting PCBs, motor drives, and AC/DC distribution systems. Furthermore, its reverse current protection and other features make it highly reliable while also offering increased safety when used in the proper applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IXKK85N60C | IXYS | 27.45 $ | 134 | MOSFET N-CH 600V 85A TO-2... |
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