IXTE250N10

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The IXTE250N10 is a high-frequency, high-current, low On-resistance silicon gate MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It is an N-channel single-ended device optimized for low voltage operation in high current applications.

This MOSFET has several advantages that make it an attractive choice for many applications. It is designed for high-current operation with a rated drain current of 10A, and a peak drain current of 15A. It also has a low On-resistance of 69 mΩ, resulting in impressive power handling capabilities.

The IXTE250N10 is suitable for a wide range of applications, including power supplies, white goods, and automotive electronics. It can also be used in audio amplifiers, lighting control, and other low voltage operations. As a high-frequency switch, it is particularly useful in applications that require high speed switching. Its low On-resistance also gives it an advantage in minimizing power losses and reducing thermal stress.

The IXTE250N10 is also highly efficient. It has an ultra-low gate threshold voltage of 0.5V and a fast switching time of just 3.2 ns, making it suitable for high-bandwidth, analog applications. It also has a high breakdown voltage of 21V and a low drain-source capacitance of 5.4 pF.

The IXTE250N10 has several unique features that make it a unique choice for specific applications. It has an extremely low junction-to-ambient thermal resistance of 3°C/W, and a low gate-drain charge of 1.35 nC. The extremely low junction-to-ambient thermal resistance allows the device to efficiently dissipate heat, improving overall power efficiency.

In addition to its low power loss, the IXTE250N10 also has a low gate-drain charge. This allows it to operate at high speeds while maintaining low losses and high efficiency. Additionally, its low gate threshold voltage allows it to work with both analog and digital signals.

The IXTE250N10 operates according to the same principle as all MOSFETs. It contains a gate, a source, and a drain. The gate is used to control the flow of current between the source and the drain. The voltage applied to the gate controls the electric field and the amount of current that is allowed to flow.

When the gate is open, the channel is created between the source and the drain, allowing current to pass through. The degree of current flow is regulated by the amount of voltage applied to the gate. When the voltage is increased, a larger electric field is created, allowing more current to flow, while a decrease in voltage will reduce the size of the electric field and decrease the amount of current that is allowed.

The IXTE250N10 is a versatile and highly efficient MOSFET designed for various applications. Its features make it an excellent choice for high-current, low-voltage operations. Its high current rating, low On-resistance, and low gate-drain charge give the device impressive power and energy efficiency, while its low gate threshold voltage allows it to work with both analog and digital signals. The device’s ultra-low junction-to-ambient thermal resistance also helps to improve overall power efficiency by dissipating heat.

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