| Allicdata Part #: | IXTI12N50P-ND |
| Manufacturer Part#: |
IXTI12N50P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 12A I2-PAK |
| More Detail: | N-Channel 500V 12A (Tc) 200W (Tc) Through Hole TO-... |
| DataSheet: |  IXTI12N50P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 (I2PAK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1830pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| Series: | Polar™ |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IXTI12N50P is a 12A n-channel power MOSFET with 50V voltage rating. It is one of a special type of transistor called a field-effect transistor (FET). FETs are similar to BJT (bipolar junction transistors) in that they both have three terminals and are current-controlled devices, but FETs are voltage-controlled and are generally used for applications requiring higher power.
MOSFETs are a type of FET, and the IXTI12N50P is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single-channel FET, as it has only one active channel, giving it the ability to switch a single load.
The IXTI12N50P is primarily used in the power control, switching power supply, and power amplifier fields. It is used in power management applications such as motor control, heating elements, and LED dimmers. It is also widely used because it has low on-resistance (RDS Values) and good thermal characteristics, making it suitable for high-frequency, high-temperature applications.
In operation, the IXTI12N50P works just like any other FET. A voltage applied to the gate terminal of the transistor controls the current flowing through the channel. When the gate voltage is zero, the MOSFET is turned off, blocking the flow of current. As the gate voltage is increased, the source to drain current increases, until the voltage reaches the threshold voltage (VgsTh) of the transistor and the MOSFET is turned on. This is known as the saturation mode of operation.
The IXTI12N50P has a low gate capacitance (Cgs) making it suitable for high-frequency operations. It is also available in a wide variety of packages, including TO-220, TO-92, SOT-223, and DPAK, so it is easy to find the package that best suits the application.
Overall, the IXTI12N50P is a very reliable and efficient MOSFET, capable of withstanding high temperatures and switching frequencies. It can handle 12A at 50V, making it suitable for a wide variety of applications. It is also available in various packages, making it easy to find the right one for the job.
The specific data is subject to PDF, and the above content is for reference
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