IXTL2X180N10T

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The IXTL2X180N10T is a 60V, 180A power mosfet array, which includes two hot-electron MOSFETs in a conventional dual source/drain package. This device is suitable for use in a wide variety of power management applications, from consumer electronics to industrial control systems and beyond.

Application Field

The IXTL2X180N10T is ideally suited for power supply design in consumer, automotive and industrial applications. The device is designed for applications where low on resistance, high current synchronous rectification, and high output voltage ripple requirements are needed. Due to its low on-resistance of 0.006 Ohm for each MOSFET, switching losses are minimized and efficient operation is achieved.

The IXTL2X180N10T is a suitable solution for high-density, high-current switching applications, such as DC/DC converters, switched-mode power supplies (SMPS), motor drives, amplifier circuits, and various other switching power supplies.

In addition, the device is also well-suited for use in automotive applications, such as alternator charging and starter motor controllers, and industrial applications, such as HVAC and UPS systems.

Working Principle

The IXTL2X180N10T is composed of two vertical N-channel MOSFETs with an integral body diode connected between the gate and drain on each FET. Each FET has a drain terminal that can be controlled from a separate logic signal.

When both FETs conduct, the current flow is drawn from the internal body diode, not from the input gate-drain junction. This arrangement reduces power dissipation and minimizes EMI compared to a conventional MOSFET configuration.

The IXTL2X180N10T is designed with a low input capacitance of 1,100 pF and a low output capacitance of 80 pF. This minimizes switching losses and reduces gate and drain ringing, enabling improved EMI performance.

The low input capacitance and low output capacitance of the device are a result of the advanced trench technology used, which minimizes the size of the device and decreases the current-flow speed. In addition, the device possesses a diode forward-voltage drop of 0.9V and forward and reverse avalanche breakdown rated as 100kV/cm.

The device includes a thermal shutdown and over-voltage protection feature. The overvoltage protection feature is designed to protect the device from overvoltage conditions, while the thermal shutdown feature is designed to protect the device from excessive junction temperatures.

The IXTL2X180N10T is compatible with popular logic families, including ESD protection of Class 3 IEC 61000-4-2. The device is RoHS compliant and is also rated for operation over the temperature range of -40°C to 175°C.

Conclusion

The IXTL2X180N10T is a 60V, 180A power mosfet array that is suitable for use in a wide variety of power management applications. It is designed with advanced trench technology and includes a thermal shutdown and over-voltage protection feature. The device has a low input capacitance of 1,100 pF, a low output capacitance of 80 pF, and is rated for operation over the temperature range of -40°C to 175°C.

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