Allicdata Part #: | IXTL2X220N075T-ND |
Manufacturer Part#: |
IXTL2X220N075T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET 2N-CH 75V 120A I5-PAK |
More Detail: | Mosfet Array 2 N-Channel (Dual) 75V 120A 150W Thro... |
DataSheet: | IXTL2X220N075T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMV™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 120A |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7700pF @ 25V |
Power - Max: | 150W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | ISOPLUSi5-Pak™ |
Supplier Device Package: | ISOPLUSi5-Pak™ |
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IXT2LX220N075T is a type of two-level array transistors and metal-oxide-semiconductor field-effect transistor (MOSFET) which is mostly used in networking and embedded applications. Such array transistors are often composed of two or more MOSFETs of the same type and geometry connected in parallel with each other. This type of transistor array ensures that the total current is uniform and optimal, enabling it to perform various tasks.
MOSFETs are widely used to switch or amplify signals in various electronic applications. They are especially helpful for designing high-speed, high-power circuitry as they provide very fast switching characteristics as compared to other transistor types. Generally, these transistors are used for power control applications such as switching power supplies, variable speed motors and radio frequency (RF) transmitters to name a few.
The IXT2LX220N075T two-level transistor array features two N-channel MOSFETs with the same geometry and size. This array is typically of low power and uses double a voltage, which makes it useful in applications where a low voltage drop is necessary. Additionally, due to its low power consumption, this type of transistor can be used to control power-efficient circuits that require faster switching speeds. This makes it ideal for certain applications such as switching power supplies, smartphones, tablet PCs, wireless base stations, and consumer electronic systems.
The working principle of the IXT2LX220N075T two-level transistor array is based on the conductance of electrons through the channel of an N-channel MOSFET. It utilizes an electrical field which can be generated with the help of a gate voltage to control the flow of electrons from the source to the drain. When a gate voltage is applied, the channel becomes narrow and less electrons can pass through it. This causes a drop in voltage across the resistor (VGS) and the transistor gets turned off. In the opposite case, when the gate voltage is removed, the channel widens and more electrons can pass through it, thus causing an increase in voltage across the resistor (VGS) and the transistor gets turned on.
The IXT2LX220N075T two-level transistor array can be used in applications where a low voltage drop is desirable such as switching power supplies, smart phones, tablets and consumer electronics. Additionally, due to its fast switching speed, the array is suitable for applications which require a minimal response time. Moreover, its double voltage feature improves its overall power handling requirement, making it ideal for power control applications. Furthermore, the IXT2LX220N075T two-level transistor array also features low power consumption and high thermal resistance.
The specific data is subject to PDF, and the above content is for reference
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