IXTL2X200N085T

Introduction

The IXTL2X200N085T is an n-channel trench field-effect transistor (FET) with an integrated logic level gate. It is a type of FET array, typically used in power supply and high-speed switching applications. It features low on-resistance, high peak current capabilities, and fast switching times. This type of device is especially useful in situations where low-side switching and high-side protection is needed.

Application Field

The IXTL2X200N085T is designed for operations with a supply voltage of up to 8 V and a gate voltage range of up to 30 V. It provides an active low-side switch with a drain-source voltage of up to 30 V and a drain current up to 8 A. This device is suitable for use in a variety of applications such as automotive power management, solid-state relays, and industrial motor control. It is also suitable for DC-DC converters, home-appliances, battery-powered systems, hybrid power systems, and other high voltage or low power switching applications.

Working Principle

An n-channel trench FET array consists of a series of n-type doping channels formed in a silicon substrate by implantation and patterning. The configurations of the FET array are determined by the pattern of these channels. The IXTL2X200N085T is part of a family of single-line n-channel FET arrays that provide a compact, low-power solution for switching applications. When the gate voltage is applied, an electric field is created in the channel region between the source and drain, which controls the drain current. The IXTL2X200N085T is designed to be sensitive to low gate voltages, which allows for faster switching times.

The IXTL2X200N085T is a useful device for power management applications, due to its low on-resistance of 0.085Ω. Low-on resistance means that when conduction is on, very little energy is wasted in the form of heat. In addition, the device is designed to be immune to secondary breakdown, which occurs when a high drain current temporarily overcomes the gate-source voltage, resulting in higher on-resistance. The IXTL2X200N085T also features a built-in electrostatic discharge protection, which prevents damage that could occur in high voltage environments.

Conclusion

In conclusion, the IXTL2X200N085T is a n-channel trench FET array, suitable for a variety of applications such as automotive power management, solid-state relays, and industrial motor control. It features low on-resistance, high peak current capabilities, and fast switching times. Additionally, it is designed to be immune to secondary breakdown and is protected against electrostatic discharge. The IXTL2X200N085T is an ideal solution for low power switching applications, offering a low-cost, long-term reliable solution.