IXTL2N470

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTL2N470 is a single field-effect transistor (FET) with integrated low-resistance source and drain regions. It consists of a current-moderating layer of silicon nitride (SiN) between the source and drain regions, which allows it to operate at higher temperatures while maintaining lower contact resistance. The IXTL2N470 is particularly suited for applications, such as motor control and switching, in which high current and low contact resistance is required.

The IXTL2N470 is a metal-oxide-semiconductor FET (MOSFET), specifically an enhancement-mode MOSFET. This type of transistor differs from the majority in that it requires no bias voltage to be applied at the gate in order for the switch to be operational. This makes it ideal for many applications that require a fast switching time and low power consumption, as no external bias supply is necessary. The IXTL2N470 also features a low on-resistance (RDS), which makes it well suited for applications in which high levels of power need to be safely switched.

The working principle of the IXTL2N470 is based on the field effect phenomenon, utilizing the transistor\'s source-drain voltage (Vds) to modulate its conductance. When the gate voltage (Vgs) is greater than the source-drain voltage (Vds), the FET is in an enhancement mode. In this state, a small current will flow between the source and the drain, creating a conductive path between the two regions. When the gate voltage (Vgs) is lower than the source-drain voltage (Vds), the FET is in a depletion mode, in which current flow between the source and drain is blocked. This is a key feature of the IXTL2N470, as it allows for a rapid switch between on and off states.

The IXTL2N470 is also ideal for power switching applications, as it has an incredibly low on-resistance (RDSon), allowing even high current switching while still maintaining a high level of efficiency. This makes it advantageous over other types of FETs, as it can switch higher levels of current in a more efficient manner. Additionally, the IXTL2N470 supports pulse current and high speed switching, making it ideal for motor control and other high speed switching applications.

In summary, the IXTL2N470 is a single enhancement-mode FET that has a low on-resistance (RDSon) and can handle high currents with little loss. Its integrated low-resistance source and drain regions also make it well suited for applications requiring fast switching and low power consumption. Additionally, its ability to handle pulse current and high speed switching also make it an ideal choice for a variety of motor control and switching applications.

The specific data is subject to PDF, and the above content is for reference