IXUN280N10 Allicdata Electronics
Allicdata Part #:

IXUN280N10-ND

Manufacturer Part#:

IXUN280N10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 100V 280A SOT-227B
More Detail: N-Channel 100V 280A (Tc) 770W (Tc) Chassis Mount S...
DataSheet: IXUN280N10 datasheetIXUN280N10 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 770W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 440nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5 mOhm @ 140A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IXUN280N10 is an enhancement-mode field-effect transistor (FET) that performs various functions as an amplifier and switch in various electrical and electronic devices. It is also referred to as a metal-oxide-semiconductor FET (MOSFET).

The IXUN280N10 consists of a source terminal, a gate terminal, and a drain terminal. The source terminal has the largest current capacity and is mainly responsible for providing the current to the device. The gate terminal has the highest voltage capacity and is mainly responsible for providing the voltage to the device. The drain terminal has the smallest current capacity and is mainly responsible for providing the drain current to the device.

The working principle of the IXUN280N10 is based on the presence of a channel of electrons between the source and drain terminals. When a voltage is applied to the gate terminal, an electric field is generated by the gate that attracts electrons from the source terminal and repels electrons from the drain terminal. This forms an inversion layer of charge carriers in the substrate material which is located between the source and drain terminals. The electrons in the inversion layer make it easier for current to flow across the gap between the source and drain terminals, which is called the channel conductance.

The IXUN280N10 is used in a variety of applications such as power electronics, amplifier, switching regulator, and audio amplifiers. In power electronics, it is used in power switching applications such as motor drives, power converters, and power protection circuits. It is also used in amplifier applications where it is used to amplify signals as well as switch signals. In switching regulator applications, it is used to control the output voltage in DC-DC power converters. Furthermore, it is used in audio applications as an audio switch or audio amplifier.

Additionally, the IXUN280N10 is used in various logic applications. It can be used as an enable logic, level shifter, and logic inverters. The enable logic is used to turn on and off power to a device. The level shifter is used to change the input voltage level from one voltage to another. Moreover, the logic inverter is used to invert the logic of a circuit from “0” to “1” or from “1” to “0”. This allows the circuit to perform tasks in response to different logic conditions.

In summary, the IXUN280N10 is an enhancement-mode FET that performs various functions as an amplifier and switch in various electrical and electronic devices. It consists of a source terminal, a gate terminal, and a drain terminal and works on the principle of an electrical field being generated by the gate which attracts electrons from the source terminal and repels electrons from the drain terminal. It is used in a variety of applications such as power electronics, amplifiers, switching regulators, audio amplifiers, and logic applications.

The specific data is subject to PDF, and the above content is for reference

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