
Allicdata Part #: | IXUN280N10-ND |
Manufacturer Part#: |
IXUN280N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 280A SOT-227B |
More Detail: | N-Channel 100V 280A (Tc) 770W (Tc) Chassis Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 770W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 18000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 440nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 140A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 280A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXUN280N10 is an enhancement-mode field-effect transistor (FET) that performs various functions as an amplifier and switch in various electrical and electronic devices. It is also referred to as a metal-oxide-semiconductor FET (MOSFET).
The IXUN280N10 consists of a source terminal, a gate terminal, and a drain terminal. The source terminal has the largest current capacity and is mainly responsible for providing the current to the device. The gate terminal has the highest voltage capacity and is mainly responsible for providing the voltage to the device. The drain terminal has the smallest current capacity and is mainly responsible for providing the drain current to the device.
The working principle of the IXUN280N10 is based on the presence of a channel of electrons between the source and drain terminals. When a voltage is applied to the gate terminal, an electric field is generated by the gate that attracts electrons from the source terminal and repels electrons from the drain terminal. This forms an inversion layer of charge carriers in the substrate material which is located between the source and drain terminals. The electrons in the inversion layer make it easier for current to flow across the gap between the source and drain terminals, which is called the channel conductance.
The IXUN280N10 is used in a variety of applications such as power electronics, amplifier, switching regulator, and audio amplifiers. In power electronics, it is used in power switching applications such as motor drives, power converters, and power protection circuits. It is also used in amplifier applications where it is used to amplify signals as well as switch signals. In switching regulator applications, it is used to control the output voltage in DC-DC power converters. Furthermore, it is used in audio applications as an audio switch or audio amplifier.
Additionally, the IXUN280N10 is used in various logic applications. It can be used as an enable logic, level shifter, and logic inverters. The enable logic is used to turn on and off power to a device. The level shifter is used to change the input voltage level from one voltage to another. Moreover, the logic inverter is used to invert the logic of a circuit from “0” to “1” or from “1” to “0”. This allows the circuit to perform tasks in response to different logic conditions.
In summary, the IXUN280N10 is an enhancement-mode FET that performs various functions as an amplifier and switch in various electrical and electronic devices. It consists of a source terminal, a gate terminal, and a drain terminal and works on the principle of an electrical field being generated by the gate which attracts electrons from the source terminal and repels electrons from the drain terminal. It is used in a variety of applications such as power electronics, amplifiers, switching regulators, audio amplifiers, and logic applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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