IXXX100N60C3H1 Allicdata Electronics

IXXX100N60C3H1 Discrete Semiconductor Products

Allicdata Part #:

IXXX100N60C3H1-ND

Manufacturer Part#:

IXXX100N60C3H1

Price: $ 12.26
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 170A 695W PLUS247
More Detail: IGBT PT 600V 170A 695W Through Hole PLUS247™-3
DataSheet: IXXX100N60C3H1 datasheetIXXX100N60C3H1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 11.13630
Stock 1000Can Ship Immediately
$ 12.26
Specifications
Power - Max: 695W
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: --
Reverse Recovery Time (trr): 140ns
Test Condition: 360V, 70A, 2 Ohm, 15V
Td (on/off) @ 25°C: 30ns/90ns
Gate Charge: 150nC
Input Type: Standard
Switching Energy: 2mJ (on), 950µJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 70A
Current - Collector Pulsed (Icm): 340A
Current - Collector (Ic) (Max): 170A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs, or Insulated Gate Bipolar Transistors, are high-speed power switching transistors. They combine the characteristics of field-effect transistors (FETs), high-speed switching capability, and low on-state power losses of bipolar junction transistors (BJTs), high-current capability, and low saturation voltages. The IGBT technology can be embodied in power modules such as single IGBTs and IGBT modules. The IXXX100N60C3H1 is a single IGBT device specifically designed to meet the requirements of industrial applications. It has a wide operating voltage range of up to 100 volts and a maximum current rating of up to 600 amps.

The IXXX100N60C3H1 is used in a wide range of industrial applications, mainly due to its high efficiency, low power losses, and high-speed switching capability. It is typically used in motor control applications, particularly in AC and servo motor drives where it is used to control the speed and direction of the motor. It is also used in inverter applications, such as UPS systems and home appliances, where it is used to regulate the current and voltage for improved power efficiency. The IXXX100N60C3H1 is also used in the automotive industry for providing control and power to electric vehicles.

The working principle of the IXXX100N60C3H1 is based on the principle of bipolar junction transistors (BJTs). A BJT is a device that uses the movement of charge carriers, electrons and holes, across a junction between two regions of a semiconductor material. When current is applied to the base, it flows through the substrate causing the electrons and holes to move towards each other and create a “base-emitter” junction. This causes a voltage drop which causes current to flow through the collector and emitter. The IXXX100N60C3H1 uses a similar principle but uses a “gate-emitter” junction instead of a “base-emitter” junction. This allows for higher current ratings and lower voltages and is more efficient overall.

The IXXX100N60C3H1 is designed to be used in many different industrial applications including motor drives, inverters, and electric vehicle control. It offers superior performance over other types of transistors due to its wide operating voltage range, high current ratings, and low power losses. These features make it a suitable choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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