IXXX200N60C3 Discrete Semiconductor Products |
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| Allicdata Part #: | IXXX200N60C3-ND |
| Manufacturer Part#: |
IXXX200N60C3 |
| Price: | $ 11.37 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 600V 200A PLUS247 |
| More Detail: | IGBT PT 600V 340A Through Hole PLUS247™-3 |
| DataSheet: | IXXX200N60C3 Datasheet/PDF |
| Quantity: | 30 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 10.33200 |
| 10 +: | $ 9.39330 |
| 25 +: | $ 8.68868 |
| 100 +: | $ 7.98427 |
| 250 +: | $ 7.27979 |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 100A |
| Supplier Device Package: | PLUS247™-3 |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Test Condition: | 360V, 100A, 1 Ohm, 15V |
| Td (on/off) @ 25°C: | 47ns/125ns |
| Gate Charge: | 315nC |
| Input Type: | Standard |
| Switching Energy: | 3mJ (on), 1.7mJ (off) |
| Series: | XPT™, GenX3™ |
| Current - Collector Pulsed (Icm): | 900A |
| Current - Collector (Ic) (Max): | 340A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | PT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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An IXXX200N60C3 transistor is a type of Insulated Gate Bipolar Transistor (IGBT), a semi-conductor component that can be electrical switched between an on and off state. It is a single switch component with a wide range of applications and is found in a variety of electronic devices both commercially and industrially.
To understand the application field and working principle of an IXXX200N60C3 transistor, it\'s helpful to first understand the basic mechanism of IGBTs. IGBTs are a combination of the features of MOSFETs and bipolar junction transistors (BJT\'s). The gate structure employs a MOSFET gate electrode, which is insulated from the main current carrying channel by a thin gate oxide layer. This allows the IGBT to be driven by a low voltage gate signal as with a MOSFET, while at the same time giving it the current carrying capabilities of a BJT.
The application field of the IXXX200N60C3 transistor ranges from high voltage inverters to efficient motor drives and inverter circuits for domestic AC power distribution. IGBTs enjoy the added benefit of reduced power losses compared to other types of switches, allowing for improved power efficiency in applications where power output is important such as renewable energy systems.
As for its working principle, the IXXX200N60C3 utilizes the insulation between source-drain and gate circuits to achieve fast and efficient switching. When the gate is driven by a positive voltage, the transistor conducts current between the source and the drain, allowing electricity to flow. When the voltage across the gate is zero, the transistor shuts off and no current flows.
Another benefit of this type of transistor is its ability to withstand high voltage. This is due to the insulating oxide layer, which provides a higher reverse breakdown voltage than traditional BJTs. This makes it ideal for applications where high voltage is required and helps to further enhance its efficiency.
The IXXX200N60C3 transistor is a powerful and efficient tool for a range of applications, such as motor drives and AC power distribution, and contributes to improved power efficiency through higher voltage application and lower power losses. With its flexible gate structure and insulation layer, the IXXX200N60C3 achieves effective switching and control, making it a valuable and dependable electronic component.
The specific data is subject to PDF, and the above content is for reference
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IXXX200N60C3 Datasheet/PDF